Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process

Mohammadreza Pourakbar; Jean-Michel Redoute; Michael Faulkner

Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process

Mohammadreza Pourakbar, Jean-Michel Redoute, Michael Faulkner

Electrical and Computer Systems Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

Original language	English
Title of host publication	Proceedings of the Asia-Pacific Microwave Conference 2011 (APMC 2011)
Editors	Ananda Sanagavarapu Mohan, Nemai Karmakar
Place of Publication	USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	299 - 302
Number of pages	4
ISBN (Print)	20119780858259744
Publication status	Published - 2011
Event	Asia-Pacific Microwave Conference 2011 - Melbourne Convention and Exhibition Centre, Melbourne, Australia Duration: 5 Dec 2011 → 8 Dec 2011 https://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6170030 (Proceedings)

Conference

Conference	Asia-Pacific Microwave Conference 2011
Abbreviated title	APMC 2011
Country/Territory	Australia
City	Melbourne
Period	5/12/11 → 8/12/11
Internet address	https://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6170030 (Proceedings)

Cite this

Pourakbar, Mohammadreza ; Redoute, Jean-Michel ; Faulkner, Michael. / Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process. Proceedings of the Asia-Pacific Microwave Conference 2011 (APMC 2011). editor / Ananda Sanagavarapu Mohan ; Nemai Karmakar. USA : IEEE, Institute of Electrical and Electronics Engineers, 2011. pp. 299 - 302

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isbn = "20119780858259744",

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booktitle = "Proceedings of the Asia-Pacific Microwave Conference 2011 (APMC 2011)",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States of America",

note = "Asia-Pacific Microwave Conference 2011, APMC 2011 ; Conference date: 05-12-2011 Through 08-12-2011",

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Pourakbar, M, Redoute, J-M & Faulkner, M 2011, Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process. in AS Mohan & N Karmakar (eds), Proceedings of the Asia-Pacific Microwave Conference 2011 (APMC 2011). IEEE, Institute of Electrical and Electronics Engineers, USA, pp. 299 - 302, Asia-Pacific Microwave Conference 2011, Melbourne, Victoria, Australia, 5/12/11.

Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process. / Pourakbar, Mohammadreza; Redoute, Jean-Michel; Faulkner, Michael.
Proceedings of the Asia-Pacific Microwave Conference 2011 (APMC 2011). ed. / Ananda Sanagavarapu Mohan; Nemai Karmakar. USA: IEEE, Institute of Electrical and Electronics Engineers, 2011. p. 299 - 302.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

TY - GEN

T1 - Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process

AU - Pourakbar, Mohammadreza

AU - Redoute, Jean-Michel

AU - Faulkner, Michael

PY - 2011

Y1 - 2011

UR - http://ieeexplore.ieee.org.ezproxy.lib.monash.edu.au/stamp/stamp.jsp?tp=&arnumber=6173745

UR - https://www.scopus.com/pages/publications/84860542189

M3 - Conference Paper

SN - 20119780858259744

SP - 299

EP - 302

BT - Proceedings of the Asia-Pacific Microwave Conference 2011 (APMC 2011)

A2 - Mohan, Ananda Sanagavarapu

A2 - Karmakar, Nemai

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - USA

T2 - Asia-Pacific Microwave Conference 2011

Y2 - 5 December 2011 through 8 December 2011

ER -

Design and implementation of high power, high linearity stacked RF FET switches in a 250 nm silicon on sapphire process

Conference

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