Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces

Po Hsiang Wang, Fu Yu Shih, Shao Yu Chen, Alvin B. Hernandez, Po Hsun Ho, Lo Yueh Chang, Chia Hao Chen, Hsiang Chih Chiu, Chun Wei Chen, Wei Hua Wang

Research output: Contribution to journalArticleResearchpeer-review

5 Citations (Scopus)


We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO2/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp3 hybridization of C atoms in the samples of graphene on activated SiO2/Si substrates. We analyze the hopping transport at low temperatures, and weak localization observed from magnetotransport measurements, suggesting a correlation between carrier localization and the sp3-type defects in the functionalized graphene. The present study demonstrates the functionalization of graphene using a novel substrate surface-activation method for future graphene-based applications.

Original languageEnglish
Pages (from-to)353-360
Number of pages8
Publication statusPublished - 8 Aug 2015
Externally publishedYes

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