Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

Amelia C.Y. Liu, J. C. McCallum, J. Wong-Leung

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    Solid-phase epitaxy was examined in deep amorphous volumes formed in silicon wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being transformed at both lateral and vertical interfaces. Sample topology was mapped using an atomic force microscope. Details of the process were clarified with both plan-view and cross-sectional transmission electron microscopy analyses. Crystallization of the amorphous volumes resulted in the incorporation of a surprisingly large number of dislocations. These arose from a variety of sources. Some of the secondary structures were identified to occur uniquely from the crystallization of volumes in this particular geometry.

    Original languageEnglish
    Pages (from-to)3229-3237
    Number of pages9
    JournalJournal of Materials Research
    Issue number11
    Publication statusPublished - 1 Jan 2001

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