Deep level transient spectroscopy characterization of defects introduced in p-Si by electron beam deposition and proton irradiation

Cloud Nyamhere, A G M Das, F D Auret, M Hayes

Research output: Contribution to journal › Conference article › Research › peer-review

Original language	English
Pages (from-to)	1 - 4
Number of pages	4
Journal	Journal of Physics: Conference Series
Volume	100
Publication status	Published - 2008

Cite this

@article{7f3ff5b43da94a4d83bd76f0768da486,

title = "Deep level transient spectroscopy characterization of defects introduced in p-Si by electron beam deposition and proton irradiation",

author = "Cloud Nyamhere and Das, {A G M} and Auret, {F D} and M Hayes",

year = "2008",

language = "English",

volume = "100",

pages = "1 -- 4",

journal = "Journal of Physics: Conference Series",

issn = "1742-6596",

publisher = "IOP Publishing",

}

TY - JOUR

T1 - Deep level transient spectroscopy characterization of defects introduced in p-Si by electron beam deposition and proton irradiation

AU - Nyamhere, Cloud

AU - Das, A G M

AU - Auret, F D

AU - Hayes, M

PY - 2008

Y1 - 2008

M3 - Conference article

SN - 1742-6596

VL - 100

SP - 1

EP - 4

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

ER -