Decomposition controlled by surface morphology during Langmuir evaporation of GaAs

J Tersoff, David Jesson, Wen-Xin Tang

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    Abstract

    When GaAs is heated in vacuum, it decomposes into Ga and As as it evaporates. Real-time in situ surface electron microscopy reveals striking bursts of daughter droplet nucleation and growth when coalescence of large parent droplets exposes nonplanar surface regions. We analyze the behavior, predicting a morphology-dependent congruent evaporation temperature. Based on this we propose a new approach for the self-assembly and positioning of quantum structures via droplet epitaxy, which we demonstrate at the proof-of-concept level. A? 2010 The American Physical Society.
    Original languageEnglish
    Pages (from-to)035702-1 - 034702-4
    Number of pages4
    JournalPhysical Review Letters
    Volume105
    Issue number3
    DOIs
    Publication statusPublished - 2010

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