Dangling bonds in amorphous silicon investigated by multifrequency EPR

Matthias Fehr, A. Schnegg, B. Rech, K. Lips, Oleksandr Astakhov, Friedhelm Finger, C. Freysoldt, Robert Bittl, Christian Teutloff

Research output: Contribution to journalArticleResearchpeer-review

4 Citations (Scopus)

Abstract

Paramagnetic coordination defects in undoped hydrogenated amorphous silicon (a-Si:H) are studied using multifrequency pulsed electron-paramagnetic resonance (EPR) spectroscopy at S-, X-, Q- and W-band microwave frequencies (3.6, 9.7, 34, and 94 GHz, respectively). The improved spectral information extractable from a multifrequency fitting procedure allows us to conclude that the g tensor exhibits a rhombic splitting instead of axial symmetry. Our methods allow for precise and accurate determination of the g tensor principal values g x = 2.0079(2), g y = 2.0061(2) and g z = 2.0034(2) and their distribution parameters (g strain).

Original languageEnglish
Pages (from-to)2067-2070
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume358
Issue number17
DOIs
Publication statusPublished - 1 Sept 2012
Externally publishedYes

Keywords

  • Dangling bond
  • Electron paramagnetic resonance
  • g value
  • Hydrogenated amorphous silicon
  • Hyperfine interaction

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