Current-carrying capacity of semiconducting carbon nanotubes

Yung Fu Chen; Michael S. Fuhrer

doi:10.1002/pssb.200669170

Current-carrying capacity of semiconducting carbon nanotubes

Yung Fu Chen, Michael S. Fuhrer

Research output: Contribution to journal › Article › Research › peer-review

8 Citations (Scopus)

Abstract

A simple Boltzmann-equation model for charge transport in semiconducting single-walled carbon nanotubes (s-SWNTs) is developed with two adjustable parameters, the acoustic and optical phonon scattering lengths. The model predicts velocity saturation rather than current saturation in s-SWNTs at high bias, in agreement with a recent experiment. At moderate densities, the model predicts currents in s-SWNTs exceeding 25 μA, the limiting current in long metallic single-walled carbon nanotubes.

Original language	English
Pages (from-to)	3403-3407
Number of pages	5
Journal	Physica Status Solidi B: Basic Solid State Physics
Volume	243
Issue number	13
DOIs	https://doi.org/10.1002/pssb.200669170
Publication status	Published - 1 Nov 2006
Externally published	Yes

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Current-carrying capacity of semiconducting carbon nanotubes

Abstract

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