Cross-over from weak localization to anti-localization in rare doped TRS protected topological insulators

Zengji Yue, Weiyao Zhao, Kirrily C. Rule, Abuduliken Bake, Lina Sang, Guangsai Yang, Cheng Tan, Zhi Li, Lan Wang, Xiaolin Wang

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6 Citations (Scopus)

Abstract

We study magneto-transport phenomena in two rare-earth doped topological insulators, SmxFexSb2-2xTe3 and SmxBi2-xTe2Se single crystals. The magneto-transport behaviours in both compounds exhibit a novel crossover between weak anti-localization (positive magnetoresistance) and weak localization (negative magnetoresistance) with changes in temperatures and magnetic fields. The weak localization is caused by rare-earth-doping induced magnetization, and the weak anti-localization originates from topologically protected surface states. The transition from weak localization to weak anti-localization demonstrates a gap opening at the Dirac point of the surface states in the quantum diffusive regime. This work demonstrates an effective way to manipulate the magneto-transport properties of the topological insulators by rare-earth element doping. Magnetometry measurements indicate that the Sm-dopant alone is paramagnetic, whereas the co-doped Fe-Sm state has short-range antiferromagnetic order. Our results demonstrate the potential to realize exotic topological effects and magneto-electric effects in gapped surface states of rare earth doped topological insulators.

Original languageEnglish
Article number126953
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume385
DOIs
Publication statusPublished - 7 Jan 2021
Externally publishedYes

Keywords

  • Electronic transport
  • Magnetoresistances
  • Topological insulator

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