Creating thin magnetic layers at the surface of Sb2Te3topological insulators using a low-energy chromium ion beam

David Cortie; Weiyao Zhao; Zengji Yue; Zhi Li; Abuduliken Bake; Olexandra Marenych; Zeljko Pastuovic; Mitchell Nancarrow; Zhaoming Zhang; Dong Chen Qi; Peter Evans; David R.G. Mitchell; Xiaolin Wang

doi:10.1063/5.0006447

Creating thin magnetic layers at the surface of Sb₂Te₃topological insulators using a low-energy chromium ion beam

David Cortie, Weiyao Zhao, Zengji Yue, Zhi Li, Abuduliken Bake, Olexandra Marenych, Zeljko Pastuovic, Mitchell Nancarrow, Zhaoming Zhang, Dong Chen Qi, Peter Evans, David R.G. Mitchell, Xiaolin Wang

Research output: Contribution to journal › Article › Research › peer-review

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Abstract

The surfaces of Sb2Te3 topological insulator crystals were implanted using a 40 keV chromium ion beam. To facilitate uniform doping, the Sb2Te3 was passivated with a thin TiO2 film before the implantation step. The resulting chemical structure was studied using atomic-resolution transmission electron microscopy. A fluence of 7 × 1015 ions/cm2 at 40 keV lead to amorphization of the Sb2Te3 surface, with chromium predominantly incorporated in the amorphous layer. Heating to 200 °C caused the amorphous region to recrystallize and led to the formation of a thin chromium-rich interfacial layer. Near-edge x-ray absorption spectroscopy indicates a uniform valence state of Cr3+ throughout, with no evidence of metallic clustering. High-temperature superparamagnetic behavior was detected up to 300 K, with an increased magnetic moment below 50 K.

Original language	English
Article number	192410
Number of pages	5
Journal	Applied Physics Letters
Volume	116
Issue number	19
DOIs	https://doi.org/10.1063/5.0006447
Publication status	Published - 14 May 2020
Externally published	Yes

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10.1063/5.0006447

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@article{7ee73b0280cd415db332e463dec31abc,

title = "Creating thin magnetic layers at the surface of Sb2Te3topological insulators using a low-energy chromium ion beam",

abstract = "The surfaces of Sb2Te3 topological insulator crystals were implanted using a 40 keV chromium ion beam. To facilitate uniform doping, the Sb2Te3 was passivated with a thin TiO2 film before the implantation step. The resulting chemical structure was studied using atomic-resolution transmission electron microscopy. A fluence of 7 × 1015 ions/cm2 at 40 keV lead to amorphization of the Sb2Te3 surface, with chromium predominantly incorporated in the amorphous layer. Heating to 200 °C caused the amorphous region to recrystallize and led to the formation of a thin chromium-rich interfacial layer. Near-edge x-ray absorption spectroscopy indicates a uniform valence state of Cr3+ throughout, with no evidence of metallic clustering. High-temperature superparamagnetic behavior was detected up to 300 K, with an increased magnetic moment below 50 K.",

author = "David Cortie and Weiyao Zhao and Zengji Yue and Zhi Li and Abuduliken Bake and Olexandra Marenych and Zeljko Pastuovic and Mitchell Nancarrow and Zhaoming Zhang and Qi, {Dong Chen} and Peter Evans and Mitchell, {David R.G.} and Xiaolin Wang",

note = "Funding Information: CE170100039). This research used the JEOL JEM-ARM200F funded by the ARC LIEF grant (No. LE120100104). Ion beam implantation was performed using the facilities at the Centre for Accelerator Science at the Australian Nuclear Science and Technology Organisation (No. P7437). Part of this research was undertaken on the Soft x-ray Spectroscopy beamline at the Australian Synchrotron, part of ANSTO. Research activities at the CAS including the operation of the LEII/accelerator systems were funded by the NCRIS program by the Australian government. Funding Information: D.C. acknowledges the support of the Australian Research Council (ARC) via Grant No. DE180100314. D.Q. acknowledges the support of the Australian Research Council (Grant No. FT160100207). This work was partly supported by the ARC Centre for Excellence in Future Low Energy Electronics (No. Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = may,

day = "14",

doi = "10.1063/5.0006447",

language = "English",

volume = "116",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Creating thin magnetic layers at the surface of Sb2Te3topological insulators using a low-energy chromium ion beam

AU - Cortie, David

AU - Zhao, Weiyao

AU - Yue, Zengji

AU - Li, Zhi

AU - Bake, Abuduliken

AU - Marenych, Olexandra

AU - Pastuovic, Zeljko

AU - Nancarrow, Mitchell

AU - Zhang, Zhaoming

AU - Qi, Dong Chen

AU - Evans, Peter

AU - Mitchell, David R.G.

AU - Wang, Xiaolin

N1 - Funding Information: CE170100039). This research used the JEOL JEM-ARM200F funded by the ARC LIEF grant (No. LE120100104). Ion beam implantation was performed using the facilities at the Centre for Accelerator Science at the Australian Nuclear Science and Technology Organisation (No. P7437). Part of this research was undertaken on the Soft x-ray Spectroscopy beamline at the Australian Synchrotron, part of ANSTO. Research activities at the CAS including the operation of the LEII/accelerator systems were funded by the NCRIS program by the Australian government. Funding Information: D.C. acknowledges the support of the Australian Research Council (ARC) via Grant No. DE180100314. D.Q. acknowledges the support of the Australian Research Council (Grant No. FT160100207). This work was partly supported by the ARC Centre for Excellence in Future Low Energy Electronics (No. Publisher Copyright: © 2020 Author(s).

PY - 2020/5/14

Y1 - 2020/5/14

N2 - The surfaces of Sb2Te3 topological insulator crystals were implanted using a 40 keV chromium ion beam. To facilitate uniform doping, the Sb2Te3 was passivated with a thin TiO2 film before the implantation step. The resulting chemical structure was studied using atomic-resolution transmission electron microscopy. A fluence of 7 × 1015 ions/cm2 at 40 keV lead to amorphization of the Sb2Te3 surface, with chromium predominantly incorporated in the amorphous layer. Heating to 200 °C caused the amorphous region to recrystallize and led to the formation of a thin chromium-rich interfacial layer. Near-edge x-ray absorption spectroscopy indicates a uniform valence state of Cr3+ throughout, with no evidence of metallic clustering. High-temperature superparamagnetic behavior was detected up to 300 K, with an increased magnetic moment below 50 K.

AB - The surfaces of Sb2Te3 topological insulator crystals were implanted using a 40 keV chromium ion beam. To facilitate uniform doping, the Sb2Te3 was passivated with a thin TiO2 film before the implantation step. The resulting chemical structure was studied using atomic-resolution transmission electron microscopy. A fluence of 7 × 1015 ions/cm2 at 40 keV lead to amorphization of the Sb2Te3 surface, with chromium predominantly incorporated in the amorphous layer. Heating to 200 °C caused the amorphous region to recrystallize and led to the formation of a thin chromium-rich interfacial layer. Near-edge x-ray absorption spectroscopy indicates a uniform valence state of Cr3+ throughout, with no evidence of metallic clustering. High-temperature superparamagnetic behavior was detected up to 300 K, with an increased magnetic moment below 50 K.

UR - http://www.scopus.com/inward/record.url?scp=85106963490&partnerID=8YFLogxK

U2 - 10.1063/5.0006447

DO - 10.1063/5.0006447

M3 - Article

AN - SCOPUS:85106963490

SN - 0003-6951

VL - 116

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192410

ER -

Creating thin magnetic layers at the surface of Sb₂Te₃topological insulators using a low-energy chromium ion beam

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ARC Centre of Excellence in Future Low-energy Electronics Technologies

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Creating thin magnetic layers at the surface of Sb2Te3topological insulators using a low-energy chromium ion beam

Abstract

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ARC Centre of Excellence in Future Low-energy Electronics Technologies

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Creating thin magnetic layers at the surface of Sb₂Te₃topological insulators using a low-energy chromium ion beam