Correlation between structural and opto-electronic characteristics of crystalline Si microhole arrays for photonic light management

Tobias Sontheimer, Veit Preidel, Daniel Lockau, Franziska Back, Eveline Rudigier-Voigt, Bernd Löchel, Alexei Erko, Frank Rainer Schmidt, Alexander Schnegg, Klaus Lips, Christiane Becker, Bernd Rech

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Abstract

By employing electron paramagnetic resonance spectroscopy, transmission electron microscopy, and optical measurements, we systematically correlate the structural and optical properties with the deep-level defect characteristics of various tailored periodic Si microhole arrays, which are manufactured in an easily scalable and versatile process on nanoimprinted sol-gel coated glass. While tapered microhole arrays in a structured base layer are characterized by partly nanocrystalline features, poor electronic quality with a defect concentration of 1017 cm-3 and a high optical sub-band gap absorption, planar polycrystalline Si layers perforated with periodic arrays of tapered microholes are composed of a compact crystalline structure and a defect concentration in the low 1016 cm-3 regime. The low defect concentration is equivalent to the one in planar state-of-the-art solid phase crystallized Si films and correlates with a low optical sub-band gap absorption. By complementing the experimental characterization with 3-dimensional finite element simulations, we provide the basis for a computer-aided approach for the low-cost fabrication of novel high-quality structures on large areas featuring tailored opto-electronic properties.

Original languageEnglish
Article number173513
JournalJournal of Applied Physics
Volume114
Issue number17
DOIs
Publication statusPublished - 7 Nov 2013
Externally publishedYes

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