Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond

Steve A. Yianni, Daniel L. Creedon, Alex K. Schenk, Kaijian Xing, Golrokh Akhgar, David I. Hoxley, Lothar Ley, Jeffrey C. McCallum, Christopher I. Pakes

Research output: Contribution to journalArticleResearchpeer-review

Abstract

The influence of surface topography on phase coherent transport in the two-dimensional (2D) hole band of surface transfer doped hydrogen-terminated (100) diamond is investigated. Low-temperature magneto-conductance measurements were carried out with an applied in-plane magnetic field to quantify the effect of electronic micro-roughness on spin dephasing in the 2D hole band for Hall bar devices with similar transport characteristics, but significantly different topographic roughness. The electronic micro-roughness of the 2D hole band, described by the parameter d2L, where d is the root-mean-square (rms) fluctuation in the width of the quantum well and L is the correlation length of the fluctuations, is found to increase for surfaces with increased roughness. Fluctuations in the well width likely arise from a locally varying hole carrier density, arising for example from a local variation in the concentration of ionic components in the surface water layer.

Original languageEnglish
Article number108377
Number of pages8
JournalDiamond and Related Materials
Volume116
DOIs
Publication statusPublished - Jun 2021

Keywords

  • Diamond
  • Phase coherent backscattering
  • Weak anti-localisation
  • Weak localization

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