"Coreless defects" and the continuity of epitaxial NiSi 2/Si(100) thin films

J. L. Batstone, J. M. Gibson, R. T. Tung, A. F.J. Levi

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Abstract

Epitaxial thin films of NiSi2 on Si(100) have been grown by room-temperature deposition of Ni followed by a high-temperature reaction. Initial stages of epitaxy revealed by transmission electron microscopy show nucleation of crystallographically equivalent islands related by a translation vector a/4〈111〉 via the underlying silicon substrate. Coalescence of islands thus requires the generation of a/4〈111〉 dislocations, which is energetically unfavorable. We find that very thin films (∼60 Å) do not coalesce, but choose to remain as islands leaving trenches of exposed substrate 15±1.5 Å in width between them. We propose that the trench left between islands can be described as a coreless defect in the silicide.

Original languageEnglish
Pages (from-to)828-830
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number10
DOIs
Publication statusPublished - 1 Dec 1988
Externally publishedYes

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