Core-level photoemission and the structure of the Si/SiO2 interface: A reappraisal

Mark M. Banaszak Holl; Sunghee Lee; F. R. McFeely

doi:10.1063/1.112109

Core-level photoemission and the structure of the Si/SiO₂ interface: A reappraisal

Mark M. Banaszak Holl, Sunghee Lee, F. R. McFeely

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74 Citations (Scopus)

Abstract

Photoemission spectroscopy of spherosiloxane cluster derived Si/SiO _x interfaces has allowed the direct assignment of observed spectral features to specific chemical moieties. The implications of these assignments for structural models of the Si/SiO₂ interface are explored. Models specifically constructed to be consistent with photoemission data are shown to be incorrect after reanalysis of core-level shifts based on the recently synthesized model systems. A new model for the Si/SiO₂ interface is proposed which is consistent with the current understanding of photoemission for Si/SiO_x interfaces as well as with results from numerous other experiments.

Original language	English
Pages (from-to)	1097-1099
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	9
DOIs	https://doi.org/10.1063/1.112109
Publication status	Published - 1 Dec 1994
Externally published	Yes

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10.1063/1.112109

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abstract = "Photoemission spectroscopy of spherosiloxane cluster derived Si/SiO x interfaces has allowed the direct assignment of observed spectral features to specific chemical moieties. The implications of these assignments for structural models of the Si/SiO2 interface are explored. Models specifically constructed to be consistent with photoemission data are shown to be incorrect after reanalysis of core-level shifts based on the recently synthesized model systems. A new model for the Si/SiO2 interface is proposed which is consistent with the current understanding of photoemission for Si/SiOx interfaces as well as with results from numerous other experiments.",

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AB - Photoemission spectroscopy of spherosiloxane cluster derived Si/SiO x interfaces has allowed the direct assignment of observed spectral features to specific chemical moieties. The implications of these assignments for structural models of the Si/SiO2 interface are explored. Models specifically constructed to be consistent with photoemission data are shown to be incorrect after reanalysis of core-level shifts based on the recently synthesized model systems. A new model for the Si/SiO2 interface is proposed which is consistent with the current understanding of photoemission for Si/SiOx interfaces as well as with results from numerous other experiments.

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Core-level photoemission and the structure of the Si/SiO2 interface: A reappraisal

Abstract

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Core-level photoemission and the structure of the Si/SiO₂ interface: A reappraisal