Core-level photoemission and the structure of the Si/SiO2 interface: A reappraisal

Mark M. Banaszak Holl, Sunghee Lee, F. R. McFeely

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Abstract

Photoemission spectroscopy of spherosiloxane cluster derived Si/SiO x interfaces has allowed the direct assignment of observed spectral features to specific chemical moieties. The implications of these assignments for structural models of the Si/SiO2 interface are explored. Models specifically constructed to be consistent with photoemission data are shown to be incorrect after reanalysis of core-level shifts based on the recently synthesized model systems. A new model for the Si/SiO2 interface is proposed which is consistent with the current understanding of photoemission for Si/SiOx interfaces as well as with results from numerous other experiments.

Original languageEnglish
Pages (from-to)1097-1099
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number9
DOIs
Publication statusPublished - 1 Dec 1994
Externally publishedYes

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