Copper(I) iodide as hole-conductor in planar perovskite solar cells: probing the origin of J-V hysteresis

Gaveshana Anuradha Sepalage, Steffen Meyer, Alexander Robert Pascoe, Andrew D Scully, Fuzhi Huang, Udo Bach, Yibing Cheng, Leone Spiccia

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Organic-inorganic lead halide perovskite solar cells are promising alternatives to silicon-based cells due to their low material costs and high photovoltaic performance. In this work, thin continuous perovskite films are combined with copper(I) iodide (CuI) as inorganic hole-conducting material to form a planar device architecture. A maximum conversion efficiency of 7.5% with an average efficiency of 5.8 ± 0.8% is achieved which, to our knowledge, is the highest reported efficiency for CuI-based devices with a planar structure. In contrast to related planar 2,2′,7,7′-tetrakis-(N,N -di-4-methoxyphenylamino)-9,9′-spirobifluorene (spiro-OMeTAD)-based devices, the CuI-based devices do not show a pronounced hysteresis when tested by scanning the potential in a forward and backward direction. The strong quenching of photoluminescence (PL) signal and comparatively fast decay of open-circuit voltage demonstrates a more rapid removal of positive charge carriers from the perovskite layer when in contact with CuI compared to spiro-OMeTAD. A slow response on a timescale of 10-100 s is observed for the spiro-OMeTAD-based devices. In comparison, the CuI-based device displays a significantly faster response as determined through electrochemical impedance spectroscopy (EIS) and open-circuit voltage decays (OCVDs). The characteristically slow kinetics measured through EIS and OCVD are linked directly to the current-voltage hysteresis. Planar perovskite/copper(I) iodide solar cells with near to no J-V hysteresis, made by employing thin CuI and perovskite layers, result in a record conversion efficiency of 7.5%. The magnitude of dielectric polarization at the perovskite/hole-conductor interface is proposed to influence the degree of J-V hysteresis
Original languageEnglish
Pages (from-to)5650-5661
Number of pages12
JournalAdvanced Functional Materials
Volume25
Issue number35
DOIs
Publication statusPublished - 2015

Keywords

  • copper(I) iodide
  • inorganic hole-conductors
  • J-V hysteresis
  • methylammonium lead iodide
  • perovskite solar cells

Cite this

Sepalage, Gaveshana Anuradha ; Meyer, Steffen ; Pascoe, Alexander Robert ; Scully, Andrew D ; Huang, Fuzhi ; Bach, Udo ; Cheng, Yibing ; Spiccia, Leone. / Copper(I) iodide as hole-conductor in planar perovskite solar cells: probing the origin of J-V hysteresis. In: Advanced Functional Materials. 2015 ; Vol. 25, No. 35. pp. 5650-5661.
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Copper(I) iodide as hole-conductor in planar perovskite solar cells: probing the origin of J-V hysteresis. / Sepalage, Gaveshana Anuradha; Meyer, Steffen; Pascoe, Alexander Robert; Scully, Andrew D; Huang, Fuzhi; Bach, Udo; Cheng, Yibing; Spiccia, Leone.

In: Advanced Functional Materials, Vol. 25, No. 35, 2015, p. 5650-5661.

Research output: Contribution to journalArticleResearchpeer-review

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T1 - Copper(I) iodide as hole-conductor in planar perovskite solar cells: probing the origin of J-V hysteresis

AU - Sepalage, Gaveshana Anuradha

AU - Meyer, Steffen

AU - Pascoe, Alexander Robert

AU - Scully, Andrew D

AU - Huang, Fuzhi

AU - Bach, Udo

AU - Cheng, Yibing

AU - Spiccia, Leone

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AB - Organic-inorganic lead halide perovskite solar cells are promising alternatives to silicon-based cells due to their low material costs and high photovoltaic performance. In this work, thin continuous perovskite films are combined with copper(I) iodide (CuI) as inorganic hole-conducting material to form a planar device architecture. A maximum conversion efficiency of 7.5% with an average efficiency of 5.8 ± 0.8% is achieved which, to our knowledge, is the highest reported efficiency for CuI-based devices with a planar structure. In contrast to related planar 2,2′,7,7′-tetrakis-(N,N -di-4-methoxyphenylamino)-9,9′-spirobifluorene (spiro-OMeTAD)-based devices, the CuI-based devices do not show a pronounced hysteresis when tested by scanning the potential in a forward and backward direction. The strong quenching of photoluminescence (PL) signal and comparatively fast decay of open-circuit voltage demonstrates a more rapid removal of positive charge carriers from the perovskite layer when in contact with CuI compared to spiro-OMeTAD. A slow response on a timescale of 10-100 s is observed for the spiro-OMeTAD-based devices. In comparison, the CuI-based device displays a significantly faster response as determined through electrochemical impedance spectroscopy (EIS) and open-circuit voltage decays (OCVDs). The characteristically slow kinetics measured through EIS and OCVD are linked directly to the current-voltage hysteresis. Planar perovskite/copper(I) iodide solar cells with near to no J-V hysteresis, made by employing thin CuI and perovskite layers, result in a record conversion efficiency of 7.5%. The magnitude of dielectric polarization at the perovskite/hole-conductor interface is proposed to influence the degree of J-V hysteresis

KW - copper(I) iodide

KW - inorganic hole-conductors

KW - J-V hysteresis

KW - methylammonium lead iodide

KW - perovskite solar cells

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