Controlling the properties of InGaAs quantum dots by selective-area epitaxy

S. Mokkapati, P. Lever, H. H. Tan, C. Jagadish, K. E. McBean, M. R. Phillips

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Abstract

Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of the selectively grown dots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAs quantum well and InGaAs quantum dots on the same wafer is demonstrated. By using a single-step growth, dots luminescing at different wavelengths, in the range 1150-1230 nm, in different parts of the same wafer are achieved.

Original languageEnglish
Article number113102
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number11
DOIs
Publication statusPublished - 14 Mar 2005
Externally publishedYes

Cite this

Mokkapati, S., Lever, P., Tan, H. H., Jagadish, C., McBean, K. E., & Phillips, M. R. (2005). Controlling the properties of InGaAs quantum dots by selective-area epitaxy. Applied Physics Letters, 86(11), 1-3. [113102]. https://doi.org/10.1063/1.1875745