Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration

S. Mokkapati; J. Wong-Leung; H. H. Tan; C. Jagadish; K. E. McBean; M. R. Phillips

doi:10.1109/NANO.2005.1500784

Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration

S. Mokkapati
, J. Wong-Leung
, H. H. Tan
, C. Jagadish
, K. E. McBean
, M. R. Phillips

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

We demonstrate that InAs and InGaAs quantum dots can be grown selectively in specific regions of GaAs substrates using selective-area MOCVD. Growth parameters can be controlled to obtain high density (∼10¹⁰/ cm²) of defect free quantum dots. Emission spectra from these selectively grown dots are presented and are comparable in linewidth to that from dots grown on unpatterned substrates. We propose that this growth scheme can be used for fabrication of quantum dot lasers integrated with waveguides.

Original language	English
Title of host publication	2005 5th IEEE Conference on Nanotechnology
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	593-595
Number of pages	3
ISBN (Print)	0780391993, 9780780391994
DOIs	https://doi.org/10.1109/NANO.2005.1500784
Publication status	Published - 1 Dec 2005
Externally published	Yes
Event	IEEE International Conference on Nanotechnology 2005 - Nagoya, Japan Duration: 11 Jul 2005 → 15 Jul 2005 Conference number: 5th https://ieeexplore.ieee.org/xpl/conhome/10038/proceeding (Proceedings)

Conference

Conference	IEEE International Conference on Nanotechnology 2005
Abbreviated title	IEEE-NANO 2005
Country/Territory	Japan
City	Nagoya
Period	11/07/05 → 15/07/05
Internet address	https://ieeexplore.ieee.org/xpl/conhome/10038/proceeding (Proceedings)

Keywords

Integrated optoelectronic devices
Quantum dots
Selective area epitaxy

Access to Document

10.1109/NANO.2005.1500784

Cite this

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title = "Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration",

abstract = "We demonstrate that InAs and InGaAs quantum dots can be grown selectively in specific regions of GaAs substrates using selective-area MOCVD. Growth parameters can be controlled to obtain high density (∼1010/ cm2) of defect free quantum dots. Emission spectra from these selectively grown dots are presented and are comparable in linewidth to that from dots grown on unpatterned substrates. We propose that this growth scheme can be used for fabrication of quantum dot lasers integrated with waveguides.",

keywords = "Integrated optoelectronic devices, Quantum dots, Selective area epitaxy",

author = "S. Mokkapati and J. Wong-Leung and Tan, \{H. H.\} and C. Jagadish and McBean, \{K. E.\} and Phillips, \{M. R.\}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/NANO.2005.1500784",

language = "English",

isbn = "0780391993",

pages = "593--595",

booktitle = "2005 5th IEEE Conference on Nanotechnology",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States of America",

note = "IEEE International Conference on Nanotechnology 2005, IEEE-NANO 2005 ; Conference date: 11-07-2005 Through 15-07-2005",

url = "https://ieeexplore.ieee.org/xpl/conhome/10038/proceeding",

}

Mokkapati, S, Wong-Leung, J, Tan, HH, Jagadish, C, McBean, KE & Phillips, MR 2005, Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration. in 2005 5th IEEE Conference on Nanotechnology. IEEE, Institute of Electrical and Electronics Engineers, pp. 593-595, IEEE International Conference on Nanotechnology 2005, Nagoya, Japan, 11/07/05. https://doi.org/10.1109/NANO.2005.1500784

TY - GEN

T1 - Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration

AU - Mokkapati, S.

AU - Wong-Leung, J.

AU - Tan, H. H.

AU - Jagadish, C.

AU - McBean, K. E.

AU - Phillips, M. R.

N1 - Conference code: 5th

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We demonstrate that InAs and InGaAs quantum dots can be grown selectively in specific regions of GaAs substrates using selective-area MOCVD. Growth parameters can be controlled to obtain high density (∼1010/ cm2) of defect free quantum dots. Emission spectra from these selectively grown dots are presented and are comparable in linewidth to that from dots grown on unpatterned substrates. We propose that this growth scheme can be used for fabrication of quantum dot lasers integrated with waveguides.

AB - We demonstrate that InAs and InGaAs quantum dots can be grown selectively in specific regions of GaAs substrates using selective-area MOCVD. Growth parameters can be controlled to obtain high density (∼1010/ cm2) of defect free quantum dots. Emission spectra from these selectively grown dots are presented and are comparable in linewidth to that from dots grown on unpatterned substrates. We propose that this growth scheme can be used for fabrication of quantum dot lasers integrated with waveguides.

KW - Integrated optoelectronic devices

KW - Quantum dots

KW - Selective area epitaxy

UR - https://www.scopus.com/pages/publications/33747011749

U2 - 10.1109/NANO.2005.1500784

DO - 10.1109/NANO.2005.1500784

M3 - Conference Paper

AN - SCOPUS:33747011749

SN - 0780391993

SN - 9780780391994

SP - 593

EP - 595

BT - 2005 5th IEEE Conference on Nanotechnology

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - IEEE International Conference on Nanotechnology 2005

Y2 - 11 July 2005 through 15 July 2005

ER -

Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration

Abstract

Conference

Keywords

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