Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration

S. Mokkapati, J. Wong-Leung, H. H. Tan, C. Jagadish, K. E. McBean, M. R. Phillips

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

Abstract

We demonstrate that InAs and InGaAs quantum dots can be grown selectively in specific regions of GaAs substrates using selective-area MOCVD. Growth parameters can be controlled to obtain high density (∼1010/ cm2) of defect free quantum dots. Emission spectra from these selectively grown dots are presented and are comparable in linewidth to that from dots grown on unpatterned substrates. We propose that this growth scheme can be used for fabrication of quantum dot lasers integrated with waveguides.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
Pages593-595
Number of pages3
DOIs
Publication statusPublished - 1 Dec 2005
Externally publishedYes
EventIEEE International Conference on Nanotechnology 2005 - Nagoya, Japan
Duration: 11 Jul 200515 Jul 2005
Conference number: 5th
https://ieeexplore.ieee.org/xpl/conhome/10038/proceeding (Proceedings)

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume1

Conference

ConferenceIEEE International Conference on Nanotechnology 2005
Abbreviated titleIEEE-NANO 2005
Country/TerritoryJapan
CityNagoya
Period11/07/0515/07/05
Internet address

Keywords

  • Integrated optoelectronic devices
  • Quantum dots
  • Selective area epitaxy

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