Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration

S. Mokkapati; J. Wong-Leung; H. H. Tan; C. Jagadish; K. E. McBean; M. R. Phillips

doi:10.1109/NANO.2005.1500784

Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration

S. Mokkapati, J. Wong-Leung, H. H. Tan, C. Jagadish, K. E. McBean, M. R. Phillips

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

We demonstrate that InAs and InGaAs quantum dots can be grown selectively in specific regions of GaAs substrates using selective-area MOCVD. Growth parameters can be controlled to obtain high density (∼10¹⁰/ cm²) of defect free quantum dots. Emission spectra from these selectively grown dots are presented and are comparable in linewidth to that from dots grown on unpatterned substrates. We propose that this growth scheme can be used for fabrication of quantum dot lasers integrated with waveguides.

Original language	English
Title of host publication	2005 5th IEEE Conference on Nanotechnology
Pages	593-595
Number of pages	3
DOIs	https://doi.org/10.1109/NANO.2005.1500784
Publication status	Published - 1 Dec 2005
Externally published	Yes
Event	2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan Duration: 11 Jul 2005 → 15 Jul 2005

Publication series

Name	2005 5th IEEE Conference on Nanotechnology
Volume	1

Conference

Conference	2005 5th IEEE Conference on Nanotechnology
Country	Japan
City	Nagoya
Period	11/07/05 → 15/07/05

Keywords

Integrated optoelectronic devices
Quantum dots
Selective area epitaxy

Access to Document

10.1109/NANO.2005.1500784

Link to publication in Scopus

Cite this

@inproceedings{661116e5bf554b61ae70d9e63bc15cbf,

title = "Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration",

abstract = "We demonstrate that InAs and InGaAs quantum dots can be grown selectively in specific regions of GaAs substrates using selective-area MOCVD. Growth parameters can be controlled to obtain high density (∼1010/ cm2) of defect free quantum dots. Emission spectra from these selectively grown dots are presented and are comparable in linewidth to that from dots grown on unpatterned substrates. We propose that this growth scheme can be used for fabrication of quantum dot lasers integrated with waveguides.",

keywords = "Integrated optoelectronic devices, Quantum dots, Selective area epitaxy",

author = "S. Mokkapati and J. Wong-Leung and Tan, {H. H.} and C. Jagadish and McBean, {K. E.} and Phillips, {M. R.}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/NANO.2005.1500784",

language = "English",

isbn = "0780391993",

series = "2005 5th IEEE Conference on Nanotechnology",

pages = "593--595",

booktitle = "2005 5th IEEE Conference on Nanotechnology",

note = "2005 5th IEEE Conference on Nanotechnology ; Conference date: 11-07-2005 Through 15-07-2005",

}

Mokkapati, S, Wong-Leung, J, Tan, HH, Jagadish, C, McBean, KE & Phillips, MR 2005, Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration. in 2005 5th IEEE Conference on Nanotechnology., 1500784, 2005 5th IEEE Conference on Nanotechnology, vol. 1, pp. 593-595, 2005 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 11/07/05. https://doi.org/10.1109/NANO.2005.1500784

Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration. / Mokkapati, S.; Wong-Leung, J.; Tan, H. H.; Jagadish, C.; McBean, K. E.; Phillips, M. R.

2005 5th IEEE Conference on Nanotechnology. 2005. p. 593-595 1500784 (2005 5th IEEE Conference on Nanotechnology; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

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AU - McBean, K. E.

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AB - We demonstrate that InAs and InGaAs quantum dots can be grown selectively in specific regions of GaAs substrates using selective-area MOCVD. Growth parameters can be controlled to obtain high density (∼1010/ cm2) of defect free quantum dots. Emission spectra from these selectively grown dots are presented and are comparable in linewidth to that from dots grown on unpatterned substrates. We propose that this growth scheme can be used for fabrication of quantum dot lasers integrated with waveguides.

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