Abstract
Graphene is a wonder material with the ultimate smallest thickness that is readily accessible to various approaches for engineering its excellent properties. Graphene doping is an efficient way to tailor its electric properties and expand its applications. This topic covers wide research fields and has been developing rapidly. This article presents a broad and comprehensive overview of the developments in the preparation and applications of doped graphene including doping methods, doping levels, doping effect and types of heteroatoms. Very recent advances are also presented. In addition, existing problems in terms of achieving greater control over and further developments of doped graphene are also discussed. The modification of graphene electronic structure by doping is one of the most promising ways to tailor its electrical properties and realize various applications. This review provides a broad overview and a comprehensive description of the preparation and applications of doped graphene along with the recent advances. The challenges and future prospects of graphene doping are also discussed.
Original language | English |
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Pages (from-to) | 2975-2991 |
Number of pages | 17 |
Journal | Small |
Volume | 10 |
Issue number | 15 |
DOIs | |
Publication status | Published - 13 Aug 2014 |
Externally published | Yes |
Keywords
- annealing
- CVD method
- doped graphene
- graphene oxide