Controling the type of lasing modes in disordered media based on GaAs-AlGaAs nanowires

Mohammad Rashidi; Tuomas Haggren; Zhicheng Su; Chennupati Jagadish; Sudha Mokkapati; Hark Hoe Tan

doi:10.1109/IPC48725.2021.9592939

Controling the type of lasing modes in disordered media based on GaAs-AlGaAs nanowires

Mohammad Rashidi, Tuomas Haggren, Zhicheng Su, Chennupati Jagadish, Sudha Mokkapati, Hark Hoe Tan

Materials Science & Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

Random lasers lase in two types of modes: resonant and nonresonant modes. The resonant modes could be used in tunable lasers while the nonresonant modes could lase at low thresholds. Here, methods to manage modes in nanowires based random lasers are shown and discussed.

Original language	English
Title of host publication	2021 IEEE Photonics Conference, IPC 2021 - Proceedings
Publisher	IEEE, Institute of Electrical and Electronics Engineers
ISBN (Electronic)	9781665416016
DOIs	https://doi.org/10.1109/IPC48725.2021.9592939
Publication status	Published - 2021
Event	IEEE Photonics Conference 2021 - Online, Canada Duration: 18 Oct 2021 → 21 Oct 2021 https://ieeexplore.ieee.org/xpl/conhome/9592836/proceeding (Proceedings)

Conference

Conference	IEEE Photonics Conference 2021
Abbreviated title	IPC 2021
Country/Territory	Canada
Period	18/10/21 → 21/10/21
Internet address	https://ieeexplore.ieee.org/xpl/conhome/9592836/proceeding (Proceedings)

Keywords

III-V semiconductor
nanowire
nonresonant mode
random laser
resonant mode

Access to Document

10.1109/IPC48725.2021.9592939

Cite this

@inproceedings{e179ecfc26a14fbd8669855f28380e41,

title = "Controling the type of lasing modes in disordered media based on GaAs-AlGaAs nanowires",

abstract = "Random lasers lase in two types of modes: resonant and nonresonant modes. The resonant modes could be used in tunable lasers while the nonresonant modes could lase at low thresholds. Here, methods to manage modes in nanowires based random lasers are shown and discussed.",

keywords = "III-V semiconductor, nanowire, nonresonant mode, random laser, resonant mode",

author = "Mohammad Rashidi and Tuomas Haggren and Zhicheng Su and Chennupati Jagadish and Sudha Mokkapati and Tan, \{Hark Hoe\}",

note = "Funding Information: ACKNOWLEDGMENT We acknowledge the Australian Research Council for financial support. Access to the epitaxial growth and fabrication facilities is made possible through the Australian National Fabrication Facility, ACT Node. TH wishes to thank the Finnish Cultural Foundation and Walter Alhstr{\"o}m Foundation for financial support. Publisher Copyright: {\textcopyright} 2021 IEEE.; IEEE Photonics Conference 2021, IPC 2021 ; Conference date: 18-10-2021 Through 21-10-2021",

year = "2021",

doi = "10.1109/IPC48725.2021.9592939",

language = "English",

booktitle = "2021 IEEE Photonics Conference, IPC 2021 - Proceedings",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States of America",

url = "https://ieeexplore.ieee.org/xpl/conhome/9592836/proceeding",

}

Rashidi, M, Haggren, T, Su, Z, Jagadish, C, Mokkapati, S & Tan, HH 2021, Controling the type of lasing modes in disordered media based on GaAs-AlGaAs nanowires. in 2021 IEEE Photonics Conference, IPC 2021 - Proceedings. IEEE, Institute of Electrical and Electronics Engineers, IEEE Photonics Conference 2021, Canada, 18/10/21. https://doi.org/10.1109/IPC48725.2021.9592939

TY - GEN

T1 - Controling the type of lasing modes in disordered media based on GaAs-AlGaAs nanowires

AU - Rashidi, Mohammad

AU - Haggren, Tuomas

AU - Su, Zhicheng

AU - Jagadish, Chennupati

AU - Mokkapati, Sudha

AU - Tan, Hark Hoe

N1 - Funding Information: ACKNOWLEDGMENT We acknowledge the Australian Research Council for financial support. Access to the epitaxial growth and fabrication facilities is made possible through the Australian National Fabrication Facility, ACT Node. TH wishes to thank the Finnish Cultural Foundation and Walter Alhström Foundation for financial support. Publisher Copyright: © 2021 IEEE.

PY - 2021

Y1 - 2021

N2 - Random lasers lase in two types of modes: resonant and nonresonant modes. The resonant modes could be used in tunable lasers while the nonresonant modes could lase at low thresholds. Here, methods to manage modes in nanowires based random lasers are shown and discussed.

AB - Random lasers lase in two types of modes: resonant and nonresonant modes. The resonant modes could be used in tunable lasers while the nonresonant modes could lase at low thresholds. Here, methods to manage modes in nanowires based random lasers are shown and discussed.

KW - III-V semiconductor

KW - nanowire

KW - nonresonant mode

KW - random laser

KW - resonant mode

UR - https://www.scopus.com/pages/publications/85123194125

U2 - 10.1109/IPC48725.2021.9592939

DO - 10.1109/IPC48725.2021.9592939

M3 - Conference Paper

AN - SCOPUS:85123194125

BT - 2021 IEEE Photonics Conference, IPC 2021 - Proceedings

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - IEEE Photonics Conference 2021

Y2 - 18 October 2021 through 21 October 2021

ER -

Controling the type of lasing modes in disordered media based on GaAs-AlGaAs nanowires

Abstract

Conference

Keywords

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