Control of epitaxial orientation of Si on CoSi2(111)

R. T. Tung; J. L. Batstone

doi:10.1063/1.99702

Control of epitaxial orientation of Si on CoSi₂(111)

R. T. Tung, J. L. Batstone

Research output: Contribution to journal › Article › Research › peer-review

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Abstract

Template techniques for Si epitaxy are designed based on the two structures, CoSi₂-C and CoSi₂-S, of the CoSi₂ surface. The different stacking sequences of the two CoSi₂ surfaces have led to the growth of single-crystal epitaxial Si layers with either type A or type B orientation on CoSi₂(111). The crystalline quality of these Si/CoSi₂/Si structures far exceeds that of those reported previously. The orientation of the epitaxial Si overlayer is also found to depend on the strain in the epitaxial CoSi₂ thin films.

Original language	English
Pages (from-to)	1611-1613
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	19
DOIs	https://doi.org/10.1063/1.99702
Publication status	Published - 1 Dec 1988
Externally published	Yes

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AB - Template techniques for Si epitaxy are designed based on the two structures, CoSi2-C and CoSi2-S, of the CoSi2 surface. The different stacking sequences of the two CoSi2 surfaces have led to the growth of single-crystal epitaxial Si layers with either type A or type B orientation on CoSi2(111). The crystalline quality of these Si/CoSi2/Si structures far exceeds that of those reported previously. The orientation of the epitaxial Si overlayer is also found to depend on the strain in the epitaxial CoSi2 thin films.

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Control of epitaxial orientation of Si on CoSi2(111)

Abstract

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Control of epitaxial orientation of Si on CoSi₂(111)