Control of epitaxial orientation of Si on CoSi2(111)

R. T. Tung, J. L. Batstone

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Abstract

Template techniques for Si epitaxy are designed based on the two structures, CoSi2-C and CoSi2-S, of the CoSi2 surface. The different stacking sequences of the two CoSi2 surfaces have led to the growth of single-crystal epitaxial Si layers with either type A or type B orientation on CoSi2(111). The crystalline quality of these Si/CoSi2/Si structures far exceeds that of those reported previously. The orientation of the epitaxial Si overlayer is also found to depend on the strain in the epitaxial CoSi2 thin films.

Original languageEnglish
Pages (from-to)1611-1613
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number19
DOIs
Publication statusPublished - 1 Dec 1988
Externally publishedYes

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