Compositional analysis of GaAs/AIGaAs heterostructures using quantitative scanning transmission electron microscopy

Hanne Kauko; Changlin Zheng; Ye Zhu; Selwyn Glanvill; Christian Dwyer; Abdul Mazid Munshi; Bjorn-Ove Fimland; Antonius T J van Helvoort; Joanne Etheridge

doi:10.1063/1.4838556

Compositional analysis of GaAs/AIGaAs heterostructures using quantitative scanning transmission electron microscopy

Hanne Kauko, Changlin Zheng, Ye Zhu, Selwyn Glanvill, Christian Dwyer, Abdul Mazid Munshi, Bjorn-Ove Fimland, Antonius T J van Helvoort, Joanne Etheridge

Research output: Contribution to journal › Article › Other › peer-review

17 Citations (Scopus)

Abstract

We demonstrate a method for compositional mapping of AlxGa 1-xAs heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.

Original language	English
Pages (from-to)	1 - 4
Number of pages	4
Journal	Applied Physics Letters
Volume	103
Issue number	23 (Art # 232111)
DOIs	https://doi.org/10.1063/1.4838556
Publication status	Published - 2013

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10.1063/1.4838556

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title = "Compositional analysis of GaAs/AIGaAs heterostructures using quantitative scanning transmission electron microscopy",

abstract = "We demonstrate a method for compositional mapping of AlxGa 1-xAs heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.",

author = "Hanne Kauko and Changlin Zheng and Ye Zhu and Selwyn Glanvill and Christian Dwyer and Munshi, {Abdul Mazid} and Bjorn-Ove Fimland and {van Helvoort}, {Antonius T J} and Joanne Etheridge",

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doi = "10.1063/1.4838556",

language = "English",

volume = "103",

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journal = "Applied Physics Letters",

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T1 - Compositional analysis of GaAs/AIGaAs heterostructures using quantitative scanning transmission electron microscopy

AU - Kauko, Hanne

AU - Zheng, Changlin

AU - Zhu, Ye

AU - Glanvill, Selwyn

AU - Dwyer, Christian

AU - Munshi, Abdul Mazid

AU - Fimland, Bjorn-Ove

AU - van Helvoort, Antonius T J

AU - Etheridge, Joanne

PY - 2013

Y1 - 2013

N2 - We demonstrate a method for compositional mapping of AlxGa 1-xAs heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.

AB - We demonstrate a method for compositional mapping of AlxGa 1-xAs heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.

UR - http://goo.gl/NqJxUm

U2 - 10.1063/1.4838556

DO - 10.1063/1.4838556

M3 - Article

SN - 0003-6951

VL - 103

SP - 1

EP - 4

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23 (Art # 232111)

ER -

Compositional analysis of GaAs/AIGaAs heterostructures using quantitative scanning transmission electron microscopy

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Centre for Electron Microscopy (MCEM)

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Compositional analysis of GaAs/AIGaAs heterostructures using quantitative scanning transmission electron microscopy

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