Compositional analysis of GaAs/AIGaAs heterostructures using quantitative scanning transmission electron microscopy

Hanne Kauko, Changlin Zheng, Ye Zhu, Selwyn Glanvill, Christian Dwyer, Abdul Mazid Munshi, Bjorn-Ove Fimland, Antonius T J van Helvoort, Joanne Etheridge

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Abstract

We demonstrate a method for compositional mapping of AlxGa 1-xAs heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.
Original languageEnglish
Pages (from-to)1 - 4
Number of pages4
JournalApplied Physics Letters
Volume103
Issue number23 (Art # 232111)
DOIs
Publication statusPublished - 2013

Cite this

Kauko, H., Zheng, C., Zhu, Y., Glanvill, S., Dwyer, C., Munshi, A. M., Fimland, B-O., van Helvoort, A. T. J., & Etheridge, J. (2013). Compositional analysis of GaAs/AIGaAs heterostructures using quantitative scanning transmission electron microscopy. Applied Physics Letters, 103(23 (Art # 232111)), 1 - 4. https://doi.org/10.1063/1.4838556