TY - JOUR
T1 - Complementary ADF-STEM
T2 - a flexible approach to quantitative 4D-STEM
AU - Esser, Bryan D.
AU - Etheridge, Joanne
N1 - Funding Information:
The authors thank Dr Weilun Li and Dr Timothy Petersen for their insightful support and helpful discussions and Dr Alison Funston and Dr Anchal Yadav for provision of the Au specimen. This work was supported by Australian Research Council (ARC) grant DP160104679. The authors acknowledge the use of the instruments and scientific and technical assistance at the Monash Centre for Electron Microscopy, a Node of Microscopy Australia, as well as equipment funded by ARC grant LE0454166. We acknowledge the people of the Kulin Nations, on whose land this research was conducted. We pay respect to their Elders, past and present.
Funding Information:
The authors thank Dr Weilun Li and Dr Timothy Petersen for their insightful support and helpful discussions and Dr Alison Funston and Dr Anchal Yadav for provision of the Au specimen. This work was supported by Australian Research Council (ARC) grant DP160104679. The authors acknowledge the use of the instruments and scientific and technical assistance at the Monash Centre for Electron Microscopy, a Node of Microscopy Australia, as well as equipment funded by ARC grant LE0454166. We acknowledge the people of the Kulin Nations, on whose land this research was conducted. We pay respect to their Elders, past and present.
Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2023/1
Y1 - 2023/1
N2 - Scanning transmission electron microscopy (STEM) has a broad range of applications in materials characterization, including real-space imaging, spectroscopy, and diffraction, at length scales from the micron to sub-Ångström. The recent development and adoption of high-speed, direct electron STEM detectors has enabled diffraction patterns to be collected at each probe position, generating four-dimensional STEM (4D-STEM) datasets and opening new imaging modalities. However, the limited pixel numbers in these detectors enforce a tradeoff between angular resolution and maximum collection angle. In this paper, we describe a straightforward method for quantifying 4D-STEM data by utilizing the full flux of the electron beam, including electrons scattered beyond the limits of the detector. This enables significantly increased experimental flexibility, including the synthesis of quantitative, high-contrast complementary annular dark field (cADF) STEM images from low-angle diffraction patterns whilst maintaining high angular resolution; as well as the optimization of electron dose and the more effective use of low dynamic range detectors.
AB - Scanning transmission electron microscopy (STEM) has a broad range of applications in materials characterization, including real-space imaging, spectroscopy, and diffraction, at length scales from the micron to sub-Ångström. The recent development and adoption of high-speed, direct electron STEM detectors has enabled diffraction patterns to be collected at each probe position, generating four-dimensional STEM (4D-STEM) datasets and opening new imaging modalities. However, the limited pixel numbers in these detectors enforce a tradeoff between angular resolution and maximum collection angle. In this paper, we describe a straightforward method for quantifying 4D-STEM data by utilizing the full flux of the electron beam, including electrons scattered beyond the limits of the detector. This enables significantly increased experimental flexibility, including the synthesis of quantitative, high-contrast complementary annular dark field (cADF) STEM images from low-angle diffraction patterns whilst maintaining high angular resolution; as well as the optimization of electron dose and the more effective use of low dynamic range detectors.
KW - Annular Dark Field STEM
KW - Four-Dimensional Scanning Transmission Electron Microscopy (4D-STEM)
KW - Quantitative STEM
UR - http://www.scopus.com/inward/record.url?scp=85140931912&partnerID=8YFLogxK
U2 - 10.1016/j.ultramic.2022.113627
DO - 10.1016/j.ultramic.2022.113627
M3 - Article
C2 - 36327791
AN - SCOPUS:85140931912
SN - 0304-3991
VL - 243
JO - Ultramicroscopy
JF - Ultramicroscopy
M1 - 113627
ER -