Comparative study of nc-Si

H deposited by reactive sputtering using crystalline and polycrystalline silicon targets

P. Dutta, S. Paul, S. Tripathi, Y. Chen, S. Chatterjee, V. Bommisetty, D. Galipeau, A. Liu

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

1 Citation (Scopus)

Abstract

Nanocrystalline silicon (nc-Si:H) is an important material for solar cell applications. Thin films of nc-Si:H can be deposited cost-effectively using chemical vapor deposition (CVD) and sputter deposition. While CVD method offer higher deposition rate and is commonly used in PV industry, microstructural properties (such as hydrogen incorporation, crystallinity, surface morphology, dopant incorporation) can be efficiently controlled using sputter deposition. While all the previous studies on sputter deposited nc-Si used crystalline Si (c-Si) sputter target, the current study compares the properties of nc:Si-H films using single and polycrystalline Si (p-Si) targets. P-Si is relatively inexpensive and easy to fabricate in bulk quantities. Several sets of nc-Si:H films were deposited using both c-Si and p-Si targets under similar conditions on glass substrates and characterized using TEM, XRD, AFM, UV-VIS spectroscopy and DC conductivity. Results indicate that surface morphology, size of nanocrystals, crystalline fraction, optical bandgap, coefficient of optical absorption and activation energy of samples were independent of sputter target used. Preferred orientation of nanocrystallites for all the films was along (111) direction with a crystallite size of 4-10 nm. All the samples have wide optical band gap ranging between 2 and 2.1 eV. Comparable activation energies at low (≪370K) and high temperature (≫370K) regions was obtained and was attributed to carrier transport through nanocrystalline and amorphous phase of the films. These results indicate that nc-Si:H thin films for solar cell applications can deposited using low-cost p-Si targets in-lieu of conventional c-Si targets.

Original languageEnglish
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs
Publication statusPublished - 1 Dec 2008
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States of America
Duration: 11 May 200816 May 2008

Conference

Conference33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States of America
CitySan Diego, CA
Period11/05/0816/05/08

Cite this

Dutta, P., Paul, S., Tripathi, S., Chen, Y., Chatterjee, S., Bommisetty, V., ... Liu, A. (2008). Comparative study of nc-Si: H deposited by reactive sputtering using crystalline and polycrystalline silicon targets. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 [4922804] https://doi.org/10.1109/PVSC.2008.4922804
Dutta, P. ; Paul, S. ; Tripathi, S. ; Chen, Y. ; Chatterjee, S. ; Bommisetty, V. ; Galipeau, D. ; Liu, A. / Comparative study of nc-Si : H deposited by reactive sputtering using crystalline and polycrystalline silicon targets. 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008.
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title = "Comparative study of nc-Si: H deposited by reactive sputtering using crystalline and polycrystalline silicon targets",
abstract = "Nanocrystalline silicon (nc-Si:H) is an important material for solar cell applications. Thin films of nc-Si:H can be deposited cost-effectively using chemical vapor deposition (CVD) and sputter deposition. While CVD method offer higher deposition rate and is commonly used in PV industry, microstructural properties (such as hydrogen incorporation, crystallinity, surface morphology, dopant incorporation) can be efficiently controlled using sputter deposition. While all the previous studies on sputter deposited nc-Si used crystalline Si (c-Si) sputter target, the current study compares the properties of nc:Si-H films using single and polycrystalline Si (p-Si) targets. P-Si is relatively inexpensive and easy to fabricate in bulk quantities. Several sets of nc-Si:H films were deposited using both c-Si and p-Si targets under similar conditions on glass substrates and characterized using TEM, XRD, AFM, UV-VIS spectroscopy and DC conductivity. Results indicate that surface morphology, size of nanocrystals, crystalline fraction, optical bandgap, coefficient of optical absorption and activation energy of samples were independent of sputter target used. Preferred orientation of nanocrystallites for all the films was along (111) direction with a crystallite size of 4-10 nm. All the samples have wide optical band gap ranging between 2 and 2.1 eV. Comparable activation energies at low (≪370K) and high temperature (≫370K) regions was obtained and was attributed to carrier transport through nanocrystalline and amorphous phase of the films. These results indicate that nc-Si:H thin films for solar cell applications can deposited using low-cost p-Si targets in-lieu of conventional c-Si targets.",
author = "P. Dutta and S. Paul and S. Tripathi and Y. Chen and S. Chatterjee and V. Bommisetty and D. Galipeau and A. Liu",
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Dutta, P, Paul, S, Tripathi, S, Chen, Y, Chatterjee, S, Bommisetty, V, Galipeau, D & Liu, A 2008, Comparative study of nc-Si: H deposited by reactive sputtering using crystalline and polycrystalline silicon targets. in 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008., 4922804, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States of America, 11/05/08. https://doi.org/10.1109/PVSC.2008.4922804

Comparative study of nc-Si : H deposited by reactive sputtering using crystalline and polycrystalline silicon targets. / Dutta, P.; Paul, S.; Tripathi, S.; Chen, Y.; Chatterjee, S.; Bommisetty, V.; Galipeau, D.; Liu, A.

33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922804.

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

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T1 - Comparative study of nc-Si

T2 - H deposited by reactive sputtering using crystalline and polycrystalline silicon targets

AU - Dutta, P.

AU - Paul, S.

AU - Tripathi, S.

AU - Chen, Y.

AU - Chatterjee, S.

AU - Bommisetty, V.

AU - Galipeau, D.

AU - Liu, A.

PY - 2008/12/1

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N2 - Nanocrystalline silicon (nc-Si:H) is an important material for solar cell applications. Thin films of nc-Si:H can be deposited cost-effectively using chemical vapor deposition (CVD) and sputter deposition. While CVD method offer higher deposition rate and is commonly used in PV industry, microstructural properties (such as hydrogen incorporation, crystallinity, surface morphology, dopant incorporation) can be efficiently controlled using sputter deposition. While all the previous studies on sputter deposited nc-Si used crystalline Si (c-Si) sputter target, the current study compares the properties of nc:Si-H films using single and polycrystalline Si (p-Si) targets. P-Si is relatively inexpensive and easy to fabricate in bulk quantities. Several sets of nc-Si:H films were deposited using both c-Si and p-Si targets under similar conditions on glass substrates and characterized using TEM, XRD, AFM, UV-VIS spectroscopy and DC conductivity. Results indicate that surface morphology, size of nanocrystals, crystalline fraction, optical bandgap, coefficient of optical absorption and activation energy of samples were independent of sputter target used. Preferred orientation of nanocrystallites for all the films was along (111) direction with a crystallite size of 4-10 nm. All the samples have wide optical band gap ranging between 2 and 2.1 eV. Comparable activation energies at low (≪370K) and high temperature (≫370K) regions was obtained and was attributed to carrier transport through nanocrystalline and amorphous phase of the films. These results indicate that nc-Si:H thin films for solar cell applications can deposited using low-cost p-Si targets in-lieu of conventional c-Si targets.

AB - Nanocrystalline silicon (nc-Si:H) is an important material for solar cell applications. Thin films of nc-Si:H can be deposited cost-effectively using chemical vapor deposition (CVD) and sputter deposition. While CVD method offer higher deposition rate and is commonly used in PV industry, microstructural properties (such as hydrogen incorporation, crystallinity, surface morphology, dopant incorporation) can be efficiently controlled using sputter deposition. While all the previous studies on sputter deposited nc-Si used crystalline Si (c-Si) sputter target, the current study compares the properties of nc:Si-H films using single and polycrystalline Si (p-Si) targets. P-Si is relatively inexpensive and easy to fabricate in bulk quantities. Several sets of nc-Si:H films were deposited using both c-Si and p-Si targets under similar conditions on glass substrates and characterized using TEM, XRD, AFM, UV-VIS spectroscopy and DC conductivity. Results indicate that surface morphology, size of nanocrystals, crystalline fraction, optical bandgap, coefficient of optical absorption and activation energy of samples were independent of sputter target used. Preferred orientation of nanocrystallites for all the films was along (111) direction with a crystallite size of 4-10 nm. All the samples have wide optical band gap ranging between 2 and 2.1 eV. Comparable activation energies at low (≪370K) and high temperature (≫370K) regions was obtained and was attributed to carrier transport through nanocrystalline and amorphous phase of the films. These results indicate that nc-Si:H thin films for solar cell applications can deposited using low-cost p-Si targets in-lieu of conventional c-Si targets.

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DO - 10.1109/PVSC.2008.4922804

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BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008

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Dutta P, Paul S, Tripathi S, Chen Y, Chatterjee S, Bommisetty V et al. Comparative study of nc-Si: H deposited by reactive sputtering using crystalline and polycrystalline silicon targets. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922804 https://doi.org/10.1109/PVSC.2008.4922804