Abstract
The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a two-channel conductance model including parallel thermal activation and variable range hopping channels, which gives the electric-field-dependent band gap whose magnitude is found to be in good agreement with infrared absorption experiments. Low-temperature transport is similar to that seen in previous studies of dual-gated bilayer graphene with edges, suggesting that edge transport does not play an important role.
Original language | English |
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Pages (from-to) | 4521-4525 |
Number of pages | 5 |
Journal | Nano Letters |
Volume | 10 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2010 |
Externally published | Yes |