Charge transport in dual gated bilayer graphene with corbino geometry

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Abstract

The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a two-channel conductance model including parallel thermal activation and variable range hopping channels, which gives the electric-field-dependent band gap whose magnitude is found to be in good agreement with infrared absorption experiments. Low-temperature transport is similar to that seen in previous studies of dual-gated bilayer graphene with edges, suggesting that edge transport does not play an important role.
Original languageEnglish
Pages (from-to)4521-4525
Number of pages5
JournalNano Letters
Volume10
Issue number11
DOIs
Publication statusPublished - 2010
Externally publishedYes

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