Charge sensing of a few-donor double quantum dot in silicon

Thomas F Watson, Bent Weber, Holger Buch, Martin Fuechsle, Michelle Yvonne Simmons

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We demonstrate the charge sensing of a few-donor double quantum dot precision placed with atomic resolution scanning tunnelling microscope lithography. We show that a tunnel-coupled single electron transistor (SET) can be used to detect electron transitions on both dots as well as inter-dot transitions. We demonstrate that we can control the tunnel times of the second dot to the SET island by ∼4 orders of magnitude by detuning its energy with respect to the first dot
Original languageEnglish
Article number233511
Pages (from-to)1-4
Number of pages4
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2015

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