Charge sensing of a few-donor double quantum dot in silicon

Thomas F Watson; Bent Weber; Holger Buch; Martin Fuechsle; Michelle Yvonne Simmons

doi:10.1063/1.4937576

Charge sensing of a few-donor double quantum dot in silicon

Thomas F Watson, Bent Weber, Holger Buch, Martin Fuechsle, Michelle Yvonne Simmons

School of Physics and Astronomy

Research output: Contribution to journal › Article › Research › peer-review

6 Citations (Scopus)

Abstract

We demonstrate the charge sensing of a few-donor double quantum dot precision placed with atomic resolution scanning tunnelling microscope lithography. We show that a tunnel-coupled single electron transistor (SET) can be used to detect electron transitions on both dots as well as inter-dot transitions. We demonstrate that we can control the tunnel times of the second dot to the SET island by ∼4 orders of magnitude by detuning its energy with respect to the first dot

Original language	English
Article number	233511
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics Letters
Volume	107
Issue number	23
DOIs	https://doi.org/10.1063/1.4937576
Publication status	Published - 2015

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10.1063/1.4937576

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title = "Charge sensing of a few-donor double quantum dot in silicon",

abstract = "We demonstrate the charge sensing of a few-donor double quantum dot precision placed with atomic resolution scanning tunnelling microscope lithography. We show that a tunnel-coupled single electron transistor (SET) can be used to detect electron transitions on both dots as well as inter-dot transitions. We demonstrate that we can control the tunnel times of the second dot to the SET island by ∼4 orders of magnitude by detuning its energy with respect to the first dot",

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AU - Buch, Holger

AU - Fuechsle, Martin

AU - Simmons, Michelle Yvonne

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N2 - We demonstrate the charge sensing of a few-donor double quantum dot precision placed with atomic resolution scanning tunnelling microscope lithography. We show that a tunnel-coupled single electron transistor (SET) can be used to detect electron transitions on both dots as well as inter-dot transitions. We demonstrate that we can control the tunnel times of the second dot to the SET island by ∼4 orders of magnitude by detuning its energy with respect to the first dot

AB - We demonstrate the charge sensing of a few-donor double quantum dot precision placed with atomic resolution scanning tunnelling microscope lithography. We show that a tunnel-coupled single electron transistor (SET) can be used to detect electron transitions on both dots as well as inter-dot transitions. We demonstrate that we can control the tunnel times of the second dot to the SET island by ∼4 orders of magnitude by detuning its energy with respect to the first dot

UR - http://goo.gl/fEalC2

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M3 - Article

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SP - 1

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

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Charge sensing of a few-donor double quantum dot in silicon

Abstract

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