Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

Cloud Nyamhere, A G M Das, F D Auret, A Chawanda, Wilbert Mtangi, Q Odendaal, Alan Carr

    Research output: Contribution to journalArticleResearchpeer-review

    4 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)4379 - 4381
    Number of pages3
    JournalPhysica B: Condensed Matter
    Issue number22
    Publication statusPublished - 2009

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