Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

Cloud Nyamhere; A G M Das; F D Auret; A Chawanda; Wilbert Mtangi; Q Odendaal; Alan Carr

Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

Cloud Nyamhere, A G M Das, F D Auret, A Chawanda, Wilbert Mtangi, Q Odendaal, Alan Carr

Research output: Contribution to journal › Article › Research › peer-review

Original language	English
Pages (from-to)	4379 - 4381
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	404
Issue number	22
Publication status	Published - 2009

Cite this

@article{e2155a35638c49ca899246078752e341,

title = "Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)",

author = "Cloud Nyamhere and Das, {A G M} and Auret, {F D} and A Chawanda and Wilbert Mtangi and Q Odendaal and Alan Carr",

year = "2009",

language = "English",

volume = "404",

pages = "4379 -- 4381",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "22",

}

TY - JOUR

T1 - Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

AU - Nyamhere, Cloud

AU - Das, A G M

AU - Auret, F D

AU - Chawanda, A

AU - Mtangi, Wilbert

AU - Odendaal, Q

AU - Carr, Alan

PY - 2009

Y1 - 2009

M3 - Article

SN - 0921-4526

VL - 404

SP - 4379

EP - 4381

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 22

ER -