Characterisation of active dopants in boron-doped self-assembled silicon nanostructures

Binesh Puthen Veettil, Tian Zhang, Robert Lee Chin, Xuguang Jia, Keita Nomoto, Terry Chien Jen Yang, Ziyun Lin, Lingfeng Wu, Reyifate Rexiati, Sebastian Gutsch, Gavin Conibeer, Ivan Perez-Würfl

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Abstract

Doping of silicon nanocrystals has become an important topic due to its potential to enable the fabrication of environmentally friendly and cost-effective optoelectronic and photovoltaic devices. However, doping of silicon nanocrystals has been proven difficult and most of the structural and electronic properties are still not well understood. In this work, the intrinsic and boron-doped self-assembled silicon nanocrystals were prepared and mainly characterised by the transient current method to study the behaviour of charge carriers in these materials. Our experiments quantified the amount of electrically active boron dopants that contributed to charge transport. From this, the boron doping efficiency in the nanocrystal superlattice was estimated.

Original languageEnglish
Article number153106
Number of pages4
JournalApplied Physics Letters
Volume109
Issue number15
DOIs
Publication statusPublished - 10 Oct 2016
Externally publishedYes

Cite this

Puthen Veettil, B., Zhang, T., Chin, R. L., Jia, X., Nomoto, K., Yang, T. C. J., Lin, Z., Wu, L., Rexiati, R., Gutsch, S., Conibeer, G., & Perez-Würfl, I. (2016). Characterisation of active dopants in boron-doped self-assembled silicon nanostructures. Applied Physics Letters, 109(15), [153106]. https://doi.org/10.1063/1.4964742