Carrier dynamics in p-type InGaAs/GaAs quantum dots

X. M. Wen, L. V. Dao, J. A. Davis, P. Hannaford, S. Mokkapati, H. H. Tan, C. Jagadish

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4 Citations (Scopus)


In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.

Original languageEnglish
Pages (from-to)363-365
Number of pages3
JournalJournal of Materials Science: Materials in Electronics
Issue numberSUPPL. 1
Publication statusPublished - 1 Oct 2007
Externally publishedYes

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