Boron doped Si rich oxide/SiO2 and silicon rich nitride/SiNx bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

Ziyun Lin, Lingfeng Wu, Xuguang Jia, Tian Zhang, Binesh Puthen-Veettil, Terry Chien Jen Yang, Gavin Conibeer, Ivan Perez-Wurfl

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Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO2 and Si/SiNx based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred compared to phosphine (PH3) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.

Original languageEnglish
Article number045303
Number of pages7
JournalJournal of Applied Physics
Issue number4
Publication statusPublished - 28 Jul 2015
Externally publishedYes

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