Abstract
In this study, we report a photoanode consisting of a polymeric/inorganic nanojunction between novel nanostructured 3D C 3 N 4 nano-networks and BiVO 4 substrate. This nanojunction is formed such that 3D C 3 N 4 nano-networks with a positively charged surface are efficiently anchored on the BiVO 4 photoanode with a negatively charged surface. This electrostatic self-assembly can initiate and contribute to an intimate contact at the interfaces, leading to an enhanced photoelectrochemical activity and stability compared with that fabricated by non-electrostatic assembly. The C 3 N 4 nano-network/BiVO 4 photoanode achieved a remarkable photocurrent density of 4.87 mA cm −2 for water oxidation at 1.23 V (vs. reversible hydrogen electrode) after depositing FeOOH/NiOOH as oxygen-evolution co-catalyst, which is among the highest photocurrent densities reported so far for BiVO 4 -based photoanodes.
| Original language | English |
|---|---|
| Pages (from-to) | 2510-2516 |
| Number of pages | 7 |
| Journal | ChemSusChem |
| Volume | 11 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 9 Aug 2018 |
Keywords
- 3D networks
- graphitic carbon nitride
- photo-electrochemistry
- self-assembly
- water oxidation
Cite this
}
Bismuth vanadate with electrostatically anchored 3D carbon nitride nano-networks as efficient photoanodes for water oxidation. / Luan, Peng; Zhang, Ying; Zhang, Xiaolong; Li, Zhijun; Prathapan, Ragesh; Bach, Udo; Zhang, Jie.
In: ChemSusChem, Vol. 11, No. 15, 09.08.2018, p. 2510-2516.Research output: Contribution to journal › Article › Research › peer-review
TY - JOUR
T1 - Bismuth vanadate with electrostatically anchored 3D carbon nitride nano-networks as efficient photoanodes for water oxidation
AU - Luan, Peng
AU - Zhang, Ying
AU - Zhang, Xiaolong
AU - Li, Zhijun
AU - Prathapan, Ragesh
AU - Bach, Udo
AU - Zhang, Jie
PY - 2018/8/9
Y1 - 2018/8/9
N2 - In this study, we report a photoanode consisting of a polymeric/inorganic nanojunction between novel nanostructured 3D C 3 N 4 nano-networks and BiVO 4 substrate. This nanojunction is formed such that 3D C 3 N 4 nano-networks with a positively charged surface are efficiently anchored on the BiVO 4 photoanode with a negatively charged surface. This electrostatic self-assembly can initiate and contribute to an intimate contact at the interfaces, leading to an enhanced photoelectrochemical activity and stability compared with that fabricated by non-electrostatic assembly. The C 3 N 4 nano-network/BiVO 4 photoanode achieved a remarkable photocurrent density of 4.87 mA cm −2 for water oxidation at 1.23 V (vs. reversible hydrogen electrode) after depositing FeOOH/NiOOH as oxygen-evolution co-catalyst, which is among the highest photocurrent densities reported so far for BiVO 4 -based photoanodes.
AB - In this study, we report a photoanode consisting of a polymeric/inorganic nanojunction between novel nanostructured 3D C 3 N 4 nano-networks and BiVO 4 substrate. This nanojunction is formed such that 3D C 3 N 4 nano-networks with a positively charged surface are efficiently anchored on the BiVO 4 photoanode with a negatively charged surface. This electrostatic self-assembly can initiate and contribute to an intimate contact at the interfaces, leading to an enhanced photoelectrochemical activity and stability compared with that fabricated by non-electrostatic assembly. The C 3 N 4 nano-network/BiVO 4 photoanode achieved a remarkable photocurrent density of 4.87 mA cm −2 for water oxidation at 1.23 V (vs. reversible hydrogen electrode) after depositing FeOOH/NiOOH as oxygen-evolution co-catalyst, which is among the highest photocurrent densities reported so far for BiVO 4 -based photoanodes.
KW - 3D networks
KW - graphitic carbon nitride
KW - photo-electrochemistry
KW - self-assembly
KW - water oxidation
UR - http://www.scopus.com/inward/record.url?scp=85050613159&partnerID=8YFLogxK
U2 - 10.1002/cssc.201801119
DO - 10.1002/cssc.201801119
M3 - Article
C2 - 29923319
AN - SCOPUS:85050613159
VL - 11
SP - 2510
EP - 2516
JO - ChemSusChem
JF - ChemSusChem
SN - 1864-5631
IS - 15
ER -