Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors

Yi Gao, Shuijin Lei, Tingting Kang, Linfeng Fei, Chee Leung Mak, Jian Yuan, Mingguang Zhang, Shaojuan Li, Qiaoliang Bao, Zhongming Zeng, Zhao Wang, Haoshuang Gu, Kai Zhang

Research output: Contribution to journalArticleResearchpeer-review

10 Citations (Scopus)

Abstract

Metal-phosphorus-trichalcogenides (MPTs), represented by NiPS3, FePS3, etc, are newly developed 2D wide-bandgap semiconductors and have been proposed as excellent candidates for ultraviolet (UV) optoelectronics. In spite of having superior advantages for solar-blind UV photodetectors, including those free of surface trap states, being highly compatible with versatile integrations as well as having an appropriate band gap, to date relevant study is rare. In this work, the photoresponse characteristic of UV detectors based on few-layer FePS3 has been comprehensively investigated. The responsivity of the photodetector, which is observed to be determined by bias gate voltage, may achieve as high as 171.6 mAW-1 under the illumination of 254 nm weak light, which is comparable to most commercial UV detectors. Notably, both negative and positive photoconductivities exist in the FePS3 photodetectors and can be controllably switched with bias voltage. The eminent and novel photoresponse property paves the way for the further development and practical use of 2D MPTs in high-performance UV photodetections.

Original languageEnglish
Article number244001
Number of pages7
JournalNanotechnology
Volume29
Issue number24
DOIs
Publication statusPublished - 13 Apr 2018

Keywords

  • 2D wide-bandgap material
  • FePS
  • photoconductivity
  • UV photodetector

Cite this

Gao, Y., Lei, S., Kang, T., Fei, L., Mak, C. L., Yuan, J., ... Zhang, K. (2018). Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors. Nanotechnology, 29(24), [244001]. https://doi.org/10.1088/1361-6528/aab9d2
Gao, Yi ; Lei, Shuijin ; Kang, Tingting ; Fei, Linfeng ; Mak, Chee Leung ; Yuan, Jian ; Zhang, Mingguang ; Li, Shaojuan ; Bao, Qiaoliang ; Zeng, Zhongming ; Wang, Zhao ; Gu, Haoshuang ; Zhang, Kai. / Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors. In: Nanotechnology. 2018 ; Vol. 29, No. 24.
@article{d48379add13f4b8da9ec10598678fa24,
title = "Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors",
abstract = "Metal-phosphorus-trichalcogenides (MPTs), represented by NiPS3, FePS3, etc, are newly developed 2D wide-bandgap semiconductors and have been proposed as excellent candidates for ultraviolet (UV) optoelectronics. In spite of having superior advantages for solar-blind UV photodetectors, including those free of surface trap states, being highly compatible with versatile integrations as well as having an appropriate band gap, to date relevant study is rare. In this work, the photoresponse characteristic of UV detectors based on few-layer FePS3 has been comprehensively investigated. The responsivity of the photodetector, which is observed to be determined by bias gate voltage, may achieve as high as 171.6 mAW-1 under the illumination of 254 nm weak light, which is comparable to most commercial UV detectors. Notably, both negative and positive photoconductivities exist in the FePS3 photodetectors and can be controllably switched with bias voltage. The eminent and novel photoresponse property paves the way for the further development and practical use of 2D MPTs in high-performance UV photodetections.",
keywords = "2D wide-bandgap material, FePS, photoconductivity, UV photodetector",
author = "Yi Gao and Shuijin Lei and Tingting Kang and Linfeng Fei and Mak, {Chee Leung} and Jian Yuan and Mingguang Zhang and Shaojuan Li and Qiaoliang Bao and Zhongming Zeng and Zhao Wang and Haoshuang Gu and Kai Zhang",
year = "2018",
month = "4",
day = "13",
doi = "10.1088/1361-6528/aab9d2",
language = "English",
volume = "29",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing",
number = "24",

}

Gao, Y, Lei, S, Kang, T, Fei, L, Mak, CL, Yuan, J, Zhang, M, Li, S, Bao, Q, Zeng, Z, Wang, Z, Gu, H & Zhang, K 2018, 'Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors', Nanotechnology, vol. 29, no. 24, 244001. https://doi.org/10.1088/1361-6528/aab9d2

Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors. / Gao, Yi; Lei, Shuijin; Kang, Tingting; Fei, Linfeng; Mak, Chee Leung; Yuan, Jian; Zhang, Mingguang; Li, Shaojuan; Bao, Qiaoliang; Zeng, Zhongming; Wang, Zhao; Gu, Haoshuang; Zhang, Kai.

In: Nanotechnology, Vol. 29, No. 24, 244001, 13.04.2018.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors

AU - Gao, Yi

AU - Lei, Shuijin

AU - Kang, Tingting

AU - Fei, Linfeng

AU - Mak, Chee Leung

AU - Yuan, Jian

AU - Zhang, Mingguang

AU - Li, Shaojuan

AU - Bao, Qiaoliang

AU - Zeng, Zhongming

AU - Wang, Zhao

AU - Gu, Haoshuang

AU - Zhang, Kai

PY - 2018/4/13

Y1 - 2018/4/13

N2 - Metal-phosphorus-trichalcogenides (MPTs), represented by NiPS3, FePS3, etc, are newly developed 2D wide-bandgap semiconductors and have been proposed as excellent candidates for ultraviolet (UV) optoelectronics. In spite of having superior advantages for solar-blind UV photodetectors, including those free of surface trap states, being highly compatible with versatile integrations as well as having an appropriate band gap, to date relevant study is rare. In this work, the photoresponse characteristic of UV detectors based on few-layer FePS3 has been comprehensively investigated. The responsivity of the photodetector, which is observed to be determined by bias gate voltage, may achieve as high as 171.6 mAW-1 under the illumination of 254 nm weak light, which is comparable to most commercial UV detectors. Notably, both negative and positive photoconductivities exist in the FePS3 photodetectors and can be controllably switched with bias voltage. The eminent and novel photoresponse property paves the way for the further development and practical use of 2D MPTs in high-performance UV photodetections.

AB - Metal-phosphorus-trichalcogenides (MPTs), represented by NiPS3, FePS3, etc, are newly developed 2D wide-bandgap semiconductors and have been proposed as excellent candidates for ultraviolet (UV) optoelectronics. In spite of having superior advantages for solar-blind UV photodetectors, including those free of surface trap states, being highly compatible with versatile integrations as well as having an appropriate band gap, to date relevant study is rare. In this work, the photoresponse characteristic of UV detectors based on few-layer FePS3 has been comprehensively investigated. The responsivity of the photodetector, which is observed to be determined by bias gate voltage, may achieve as high as 171.6 mAW-1 under the illumination of 254 nm weak light, which is comparable to most commercial UV detectors. Notably, both negative and positive photoconductivities exist in the FePS3 photodetectors and can be controllably switched with bias voltage. The eminent and novel photoresponse property paves the way for the further development and practical use of 2D MPTs in high-performance UV photodetections.

KW - 2D wide-bandgap material

KW - FePS

KW - photoconductivity

KW - UV photodetector

UR - http://www.scopus.com/inward/record.url?scp=85045639032&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aab9d2

DO - 10.1088/1361-6528/aab9d2

M3 - Article

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 24

M1 - 244001

ER -