Axial p-n junction design and characterization for InP nanowire array solar cells

Qian Gao, Ziyuan Li, Li Li, Kaushal Vora, Zhe Li, Ahmed Alabadla, Fan Wang, Yanan Guo, Kun Peng, Yesaya C. Wenas, Sudha Mokkapati, Fouad Karouta, Hark Hoe Tan, Chennupati Jagadish, Lan Fu

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)

Abstract

In this work, InP nanowire (NW) array solar cells with different axial p-i-n junction designs were investigated. The optical properties of the different NW structures were characterized through a series of microphotoluminescence measurements to extract important material parameters such as minority carrier lifetimes and internal quantum efficiencies. A glancing angle sputtering deposition technique has been developed to enable a direct visualization of the p-n junctions in the vertical array of InP NW solar cells (NWSCs) using electron beam-induced current (EBIC) technique. Based on EBIC and electrical simulation, it is found that the background doping in NWSC significantly affects the junction position. By modifying the junction design, the width and position of the p-n junction can be varied effectively. By employing a p-p -n structure, a high junction position (>1 μm from the substrate) and wide depletion width have been achieved as confirmed by EBIC measurement. Moreover, the NW growth substrate does not show any influence on the device behavior due to the fully decoupled junction position, indicating a promising structural design for future development of high-performance, low-cost flexible NW devices.

Original languageEnglish
Pages (from-to)237-244
Number of pages8
JournalProgress in Photovoltaics: Research and Applications
Volume27
Issue number3
DOIs
Publication statusPublished - 20 Feb 2019
Externally publishedYes

Keywords

  • axial junction
  • EBIC
  • electroluminescence
  • III-V compound semiconductors
  • nanowire array solar cells
  • selective-area MOVPE

Cite this

Gao, Qian ; Li, Ziyuan ; Li, Li ; Vora, Kaushal ; Li, Zhe ; Alabadla, Ahmed ; Wang, Fan ; Guo, Yanan ; Peng, Kun ; Wenas, Yesaya C. ; Mokkapati, Sudha ; Karouta, Fouad ; Tan, Hark Hoe ; Jagadish, Chennupati ; Fu, Lan. / Axial p-n junction design and characterization for InP nanowire array solar cells. In: Progress in Photovoltaics: Research and Applications. 2019 ; Vol. 27, No. 3. pp. 237-244.
@article{01309f39bc1a46e4966d1bb5d04a060f,
title = "Axial p-n junction design and characterization for InP nanowire array solar cells",
abstract = "In this work, InP nanowire (NW) array solar cells with different axial p-i-n junction designs were investigated. The optical properties of the different NW structures were characterized through a series of microphotoluminescence measurements to extract important material parameters such as minority carrier lifetimes and internal quantum efficiencies. A glancing angle sputtering deposition technique has been developed to enable a direct visualization of the p-n junctions in the vertical array of InP NW solar cells (NWSCs) using electron beam-induced current (EBIC) technique. Based on EBIC and electrical simulation, it is found that the background doping in NWSC significantly affects the junction position. By modifying the junction design, the width and position of the p-n junction can be varied effectively. By employing a p-p −-n structure, a high junction position (>1 μm from the substrate) and wide depletion width have been achieved as confirmed by EBIC measurement. Moreover, the NW growth substrate does not show any influence on the device behavior due to the fully decoupled junction position, indicating a promising structural design for future development of high-performance, low-cost flexible NW devices.",
keywords = "axial junction, EBIC, electroluminescence, III-V compound semiconductors, nanowire array solar cells, selective-area MOVPE",
author = "Qian Gao and Ziyuan Li and Li Li and Kaushal Vora and Zhe Li and Ahmed Alabadla and Fan Wang and Yanan Guo and Kun Peng and Wenas, {Yesaya C.} and Sudha Mokkapati and Fouad Karouta and Tan, {Hark Hoe} and Chennupati Jagadish and Lan Fu",
year = "2019",
month = "2",
day = "20",
doi = "10.1002/pip.3083",
language = "English",
volume = "27",
pages = "237--244",
journal = "Progress in Photovoltaics: Research and Applications",
issn = "1062-7995",
publisher = "Wiley-Blackwell",
number = "3",

}

Gao, Q, Li, Z, Li, L, Vora, K, Li, Z, Alabadla, A, Wang, F, Guo, Y, Peng, K, Wenas, YC, Mokkapati, S, Karouta, F, Tan, HH, Jagadish, C & Fu, L 2019, 'Axial p-n junction design and characterization for InP nanowire array solar cells', Progress in Photovoltaics: Research and Applications, vol. 27, no. 3, pp. 237-244. https://doi.org/10.1002/pip.3083

Axial p-n junction design and characterization for InP nanowire array solar cells. / Gao, Qian; Li, Ziyuan; Li, Li; Vora, Kaushal; Li, Zhe; Alabadla, Ahmed; Wang, Fan; Guo, Yanan; Peng, Kun; Wenas, Yesaya C.; Mokkapati, Sudha; Karouta, Fouad; Tan, Hark Hoe; Jagadish, Chennupati; Fu, Lan.

In: Progress in Photovoltaics: Research and Applications, Vol. 27, No. 3, 20.02.2019, p. 237-244.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Axial p-n junction design and characterization for InP nanowire array solar cells

AU - Gao, Qian

AU - Li, Ziyuan

AU - Li, Li

AU - Vora, Kaushal

AU - Li, Zhe

AU - Alabadla, Ahmed

AU - Wang, Fan

AU - Guo, Yanan

AU - Peng, Kun

AU - Wenas, Yesaya C.

AU - Mokkapati, Sudha

AU - Karouta, Fouad

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

AU - Fu, Lan

PY - 2019/2/20

Y1 - 2019/2/20

N2 - In this work, InP nanowire (NW) array solar cells with different axial p-i-n junction designs were investigated. The optical properties of the different NW structures were characterized through a series of microphotoluminescence measurements to extract important material parameters such as minority carrier lifetimes and internal quantum efficiencies. A glancing angle sputtering deposition technique has been developed to enable a direct visualization of the p-n junctions in the vertical array of InP NW solar cells (NWSCs) using electron beam-induced current (EBIC) technique. Based on EBIC and electrical simulation, it is found that the background doping in NWSC significantly affects the junction position. By modifying the junction design, the width and position of the p-n junction can be varied effectively. By employing a p-p −-n structure, a high junction position (>1 μm from the substrate) and wide depletion width have been achieved as confirmed by EBIC measurement. Moreover, the NW growth substrate does not show any influence on the device behavior due to the fully decoupled junction position, indicating a promising structural design for future development of high-performance, low-cost flexible NW devices.

AB - In this work, InP nanowire (NW) array solar cells with different axial p-i-n junction designs were investigated. The optical properties of the different NW structures were characterized through a series of microphotoluminescence measurements to extract important material parameters such as minority carrier lifetimes and internal quantum efficiencies. A glancing angle sputtering deposition technique has been developed to enable a direct visualization of the p-n junctions in the vertical array of InP NW solar cells (NWSCs) using electron beam-induced current (EBIC) technique. Based on EBIC and electrical simulation, it is found that the background doping in NWSC significantly affects the junction position. By modifying the junction design, the width and position of the p-n junction can be varied effectively. By employing a p-p −-n structure, a high junction position (>1 μm from the substrate) and wide depletion width have been achieved as confirmed by EBIC measurement. Moreover, the NW growth substrate does not show any influence on the device behavior due to the fully decoupled junction position, indicating a promising structural design for future development of high-performance, low-cost flexible NW devices.

KW - axial junction

KW - EBIC

KW - electroluminescence

KW - III-V compound semiconductors

KW - nanowire array solar cells

KW - selective-area MOVPE

UR - http://www.scopus.com/inward/record.url?scp=85056086168&partnerID=8YFLogxK

U2 - 10.1002/pip.3083

DO - 10.1002/pip.3083

M3 - Article

VL - 27

SP - 237

EP - 244

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

SN - 1062-7995

IS - 3

ER -