TY - JOUR
T1 - Atropisomeric conjugated diimides
T2 - a class of thermally responsive organic semiconductors
AU - Ge, Congwu
AU - Zhang, Wenxian
AU - Tan, Wen Liang
AU - McNeill, Christopher R.
AU - Gao, Xike
N1 - Funding Information:
The authors acknowledge financial support from the National Natural Science Foundation of China (Nos. 21502218, 21790362, and 21522209), the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB12010100), the Science and Technology Commission of Shanghai Municipality (20ZR1468900 and 18JC1410600), and the Shanghai Rising-Star Program (21QA1411100). This work was performed in part at the SAXS/WAXS beamline at the Australian Synchrotron, part of ANSTO.
Publisher Copyright:
© 2022 American Chemical Society.
PY - 2022/1/18
Y1 - 2022/1/18
N2 - Atropisomerism has been studied in many research fields; however, it is rarely studied in organic semiconductors. In this work, we report a series of room-temperature-stable atropisomeric conjugated diimides, Syn-NDI and Anti-NDI based on 1,4,5,8-naphthalenetetracarboxylic diimides (NDIs) as well as Syn-PDI and Anti-PDI based on 3,4:9,10-perylenetetracarboxylic diimides (PDIs). For these two pairs of atropisomers, the Syn and Anti conformers can be interconverted when they are in heated solution, whereas in the solid state, only the Syn conformers can converted to Anti conformers when thermally annealed. This feature can be applied to realize thermally responsive organic field-effect transistors (OFETs). Remarkably, when thermally annealed at a certain temperature, the Syn atropisomers can be fast converted to their respective Anti ones, and OFETs originally based on the Syn semiconductors show a dramatic improvement in electron mobility. For OFETs originally based on Syn-NDI, a 100-fold improvement in electron mobility is recorded when Syn-NDI was converted to Anti-NDI, while for OFETs originally based on Syn-PDI, a 5000-fold improvement in electron mobility is recorded when Syn-PDI was converted to Anti-PDI. In contrast, thermal annealing is found to have a negligible effect for OFETs based on Anti semiconductors, with the electron mobility on the same order of magnitude for all Anti semiconductor devices. This is the first time that the atropisomerism has been exploited in organic semiconductors, demonstrating great potential for stimuli-responsive devices.
AB - Atropisomerism has been studied in many research fields; however, it is rarely studied in organic semiconductors. In this work, we report a series of room-temperature-stable atropisomeric conjugated diimides, Syn-NDI and Anti-NDI based on 1,4,5,8-naphthalenetetracarboxylic diimides (NDIs) as well as Syn-PDI and Anti-PDI based on 3,4:9,10-perylenetetracarboxylic diimides (PDIs). For these two pairs of atropisomers, the Syn and Anti conformers can be interconverted when they are in heated solution, whereas in the solid state, only the Syn conformers can converted to Anti conformers when thermally annealed. This feature can be applied to realize thermally responsive organic field-effect transistors (OFETs). Remarkably, when thermally annealed at a certain temperature, the Syn atropisomers can be fast converted to their respective Anti ones, and OFETs originally based on the Syn semiconductors show a dramatic improvement in electron mobility. For OFETs originally based on Syn-NDI, a 100-fold improvement in electron mobility is recorded when Syn-NDI was converted to Anti-NDI, while for OFETs originally based on Syn-PDI, a 5000-fold improvement in electron mobility is recorded when Syn-PDI was converted to Anti-PDI. In contrast, thermal annealing is found to have a negligible effect for OFETs based on Anti semiconductors, with the electron mobility on the same order of magnitude for all Anti semiconductor devices. This is the first time that the atropisomerism has been exploited in organic semiconductors, demonstrating great potential for stimuli-responsive devices.
UR - http://www.scopus.com/inward/record.url?scp=85124020355&partnerID=8YFLogxK
U2 - 10.1021/acsmaterialslett.1c00722
DO - 10.1021/acsmaterialslett.1c00722
M3 - Article
AN - SCOPUS:85124020355
SN - 2639-4979
VL - 4
SP - 363
EP - 369
JO - ACS Materials Letters
JF - ACS Materials Letters
IS - 2
ER -