Abstract
The widely used photodetector design based on atomically thin transition metal dichalcogenides (TMDs) has a lateral metal-TMD-metal junction with a fairly small, line shape photoresponsive active area at the TMD-electrode interface. Here, we report a highly efficient photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe2. Impressively, the separation of the electron-hole pairs (excitons) extends onto the whole 1L-2L WSe2 junction surface. The responsivity of the WSe2 junction photodetector is over 3200 times higher than that of a monolayer WSe2 device and leads to a highest external quantum efficiency of 256% due to the efficient carrier extraction. Unlike the TMDp-n junctions modulated by dual gates or localized doping, which require complex fabrication procedures, our study establishes a simple, controllable, and scalable method to improve the photodetection performance by maximizing the active area for current generation.
| Original language | English |
|---|---|
| Article number | 041001 |
| Number of pages | 9 |
| Journal | Materials |
| Volume | 3 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 23 Sep 2016 |
Keywords
- Effective detective area
- Lateral p-n junction
- Optoelectronics
- Photocurrent mapping
- Transition metal dichalcogenides
Cite this
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Atomically thin lateral p-n junction photodetector with large effective detection area. / Xu, Zai-Quan; Zhang, Yupeng; Wang, Ziyu; Shen, Yuting; Huang, Wenchao; Xia, Xue; Yu, Wenzhi; Xue, Yunzhou; Sun, Litao; Zheng, Changxi; Lu, Yuerui; Liao, Lei; Bao, Qiaoliang.
In: Materials, Vol. 3, No. 4, 041001, 23.09.2016.Research output: Contribution to journal › Letter › Research › peer-review
TY - JOUR
T1 - Atomically thin lateral p-n junction photodetector with large effective detection area
AU - Xu, Zai-Quan
AU - Zhang, Yupeng
AU - Wang, Ziyu
AU - Shen, Yuting
AU - Huang, Wenchao
AU - Xia, Xue
AU - Yu, Wenzhi
AU - Xue, Yunzhou
AU - Sun, Litao
AU - Zheng, Changxi
AU - Lu, Yuerui
AU - Liao, Lei
AU - Bao, Qiaoliang
PY - 2016/9/23
Y1 - 2016/9/23
N2 - The widely used photodetector design based on atomically thin transition metal dichalcogenides (TMDs) has a lateral metal-TMD-metal junction with a fairly small, line shape photoresponsive active area at the TMD-electrode interface. Here, we report a highly efficient photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe2. Impressively, the separation of the electron-hole pairs (excitons) extends onto the whole 1L-2L WSe2 junction surface. The responsivity of the WSe2 junction photodetector is over 3200 times higher than that of a monolayer WSe2 device and leads to a highest external quantum efficiency of 256% due to the efficient carrier extraction. Unlike the TMDp-n junctions modulated by dual gates or localized doping, which require complex fabrication procedures, our study establishes a simple, controllable, and scalable method to improve the photodetection performance by maximizing the active area for current generation.
AB - The widely used photodetector design based on atomically thin transition metal dichalcogenides (TMDs) has a lateral metal-TMD-metal junction with a fairly small, line shape photoresponsive active area at the TMD-electrode interface. Here, we report a highly efficient photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe2. Impressively, the separation of the electron-hole pairs (excitons) extends onto the whole 1L-2L WSe2 junction surface. The responsivity of the WSe2 junction photodetector is over 3200 times higher than that of a monolayer WSe2 device and leads to a highest external quantum efficiency of 256% due to the efficient carrier extraction. Unlike the TMDp-n junctions modulated by dual gates or localized doping, which require complex fabrication procedures, our study establishes a simple, controllable, and scalable method to improve the photodetection performance by maximizing the active area for current generation.
KW - Effective detective area
KW - Lateral p-n junction
KW - Optoelectronics
KW - Photocurrent mapping
KW - Transition metal dichalcogenides
UR - http://www.scopus.com/inward/record.url?scp=85006124962&partnerID=8YFLogxK
U2 - 10.1088/2053-1583/3/4/041001
DO - 10.1088/2053-1583/3/4/041001
M3 - Letter
VL - 3
JO - Materials
JF - Materials
SN - 1996-1944
IS - 4
M1 - 041001
ER -