Atomically thin lateral p-n junction photodetector with large effective detection area

Zai-Quan Xu, Yupeng Zhang, Ziyu Wang, Yuting Shen, Wenchao Huang, Xue Xia, Wenzhi Yu, Yunzhou Xue, Litao Sun, Changxi Zheng, Yuerui Lu, Lei Liao, Qiaoliang Bao

Research output: Contribution to journalLetterResearchpeer-review

33 Citations (Scopus)

Abstract

The widely used photodetector design based on atomically thin transition metal dichalcogenides (TMDs) has a lateral metal-TMD-metal junction with a fairly small, line shape photoresponsive active area at the TMD-electrode interface. Here, we report a highly efficient photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe2. Impressively, the separation of the electron-hole pairs (excitons) extends onto the whole 1L-2L WSe2 junction surface. The responsivity of the WSe2 junction photodetector is over 3200 times higher than that of a monolayer WSe2 device and leads to a highest external quantum efficiency of 256% due to the efficient carrier extraction. Unlike the TMDp-n junctions modulated by dual gates or localized doping, which require complex fabrication procedures, our study establishes a simple, controllable, and scalable method to improve the photodetection performance by maximizing the active area for current generation.

Original languageEnglish
Article number041001
Number of pages9
JournalMaterials
Volume3
Issue number4
DOIs
Publication statusPublished - 23 Sep 2016

Keywords

  • Effective detective area
  • Lateral p-n junction
  • Optoelectronics
  • Photocurrent mapping
  • Transition metal dichalcogenides

Cite this

Xu, Zai-Quan ; Zhang, Yupeng ; Wang, Ziyu ; Shen, Yuting ; Huang, Wenchao ; Xia, Xue ; Yu, Wenzhi ; Xue, Yunzhou ; Sun, Litao ; Zheng, Changxi ; Lu, Yuerui ; Liao, Lei ; Bao, Qiaoliang. / Atomically thin lateral p-n junction photodetector with large effective detection area. In: Materials. 2016 ; Vol. 3, No. 4.
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title = "Atomically thin lateral p-n junction photodetector with large effective detection area",
abstract = "The widely used photodetector design based on atomically thin transition metal dichalcogenides (TMDs) has a lateral metal-TMD-metal junction with a fairly small, line shape photoresponsive active area at the TMD-electrode interface. Here, we report a highly efficient photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe2. Impressively, the separation of the electron-hole pairs (excitons) extends onto the whole 1L-2L WSe2 junction surface. The responsivity of the WSe2 junction photodetector is over 3200 times higher than that of a monolayer WSe2 device and leads to a highest external quantum efficiency of 256{\%} due to the efficient carrier extraction. Unlike the TMDp-n junctions modulated by dual gates or localized doping, which require complex fabrication procedures, our study establishes a simple, controllable, and scalable method to improve the photodetection performance by maximizing the active area for current generation.",
keywords = "Effective detective area, Lateral p-n junction, Optoelectronics, Photocurrent mapping, Transition metal dichalcogenides",
author = "Zai-Quan Xu and Yupeng Zhang and Ziyu Wang and Yuting Shen and Wenchao Huang and Xue Xia and Wenzhi Yu and Yunzhou Xue and Litao Sun and Changxi Zheng and Yuerui Lu and Lei Liao and Qiaoliang Bao",
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Xu, Z-Q, Zhang, Y, Wang, Z, Shen, Y, Huang, W, Xia, X, Yu, W, Xue, Y, Sun, L, Zheng, C, Lu, Y, Liao, L & Bao, Q 2016, 'Atomically thin lateral p-n junction photodetector with large effective detection area', Materials, vol. 3, no. 4, 041001. https://doi.org/10.1088/2053-1583/3/4/041001

Atomically thin lateral p-n junction photodetector with large effective detection area. / Xu, Zai-Quan; Zhang, Yupeng; Wang, Ziyu; Shen, Yuting; Huang, Wenchao; Xia, Xue; Yu, Wenzhi; Xue, Yunzhou; Sun, Litao; Zheng, Changxi; Lu, Yuerui; Liao, Lei; Bao, Qiaoliang.

In: Materials, Vol. 3, No. 4, 041001, 23.09.2016.

Research output: Contribution to journalLetterResearchpeer-review

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T1 - Atomically thin lateral p-n junction photodetector with large effective detection area

AU - Xu, Zai-Quan

AU - Zhang, Yupeng

AU - Wang, Ziyu

AU - Shen, Yuting

AU - Huang, Wenchao

AU - Xia, Xue

AU - Yu, Wenzhi

AU - Xue, Yunzhou

AU - Sun, Litao

AU - Zheng, Changxi

AU - Lu, Yuerui

AU - Liao, Lei

AU - Bao, Qiaoliang

PY - 2016/9/23

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N2 - The widely used photodetector design based on atomically thin transition metal dichalcogenides (TMDs) has a lateral metal-TMD-metal junction with a fairly small, line shape photoresponsive active area at the TMD-electrode interface. Here, we report a highly efficient photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe2. Impressively, the separation of the electron-hole pairs (excitons) extends onto the whole 1L-2L WSe2 junction surface. The responsivity of the WSe2 junction photodetector is over 3200 times higher than that of a monolayer WSe2 device and leads to a highest external quantum efficiency of 256% due to the efficient carrier extraction. Unlike the TMDp-n junctions modulated by dual gates or localized doping, which require complex fabrication procedures, our study establishes a simple, controllable, and scalable method to improve the photodetection performance by maximizing the active area for current generation.

AB - The widely used photodetector design based on atomically thin transition metal dichalcogenides (TMDs) has a lateral metal-TMD-metal junction with a fairly small, line shape photoresponsive active area at the TMD-electrode interface. Here, we report a highly efficient photodetector with extremely large photoresponsive active area based on a lateral junction of monolayer-bilayer WSe2. Impressively, the separation of the electron-hole pairs (excitons) extends onto the whole 1L-2L WSe2 junction surface. The responsivity of the WSe2 junction photodetector is over 3200 times higher than that of a monolayer WSe2 device and leads to a highest external quantum efficiency of 256% due to the efficient carrier extraction. Unlike the TMDp-n junctions modulated by dual gates or localized doping, which require complex fabrication procedures, our study establishes a simple, controllable, and scalable method to improve the photodetection performance by maximizing the active area for current generation.

KW - Effective detective area

KW - Lateral p-n junction

KW - Optoelectronics

KW - Photocurrent mapping

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DO - 10.1088/2053-1583/3/4/041001

M3 - Letter

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JO - Materials

JF - Materials

SN - 1996-1944

IS - 4

M1 - 041001

ER -