Atomic structure of graphene on SiO 2

Masa Ishigami, J. H. Chen, W. G. Cullen, M. S. Fuhrer, E. D. Williams

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Abstract

We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution scanning tunneling microscopy images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically clean graphene sheets.

Original languageEnglish
Pages (from-to)1643-1648
Number of pages6
JournalNano Letters
Volume7
Issue number6
DOIs
Publication statusPublished - 1 Jun 2007
Externally publishedYes

Cite this

Ishigami, M., Chen, J. H., Cullen, W. G., Fuhrer, M. S., & Williams, E. D. (2007). Atomic structure of graphene on SiO 2. Nano Letters, 7(6), 1643-1648. https://doi.org/10.1021/nl070613a
Ishigami, Masa ; Chen, J. H. ; Cullen, W. G. ; Fuhrer, M. S. ; Williams, E. D. / Atomic structure of graphene on SiO 2. In: Nano Letters. 2007 ; Vol. 7, No. 6. pp. 1643-1648.
@article{ca391c03aa894a08a303e931aaa2107b,
title = "Atomic structure of graphene on SiO 2",
abstract = "We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution scanning tunneling microscopy images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically clean graphene sheets.",
author = "Masa Ishigami and Chen, {J. H.} and Cullen, {W. G.} and Fuhrer, {M. S.} and Williams, {E. D.}",
year = "2007",
month = "6",
day = "1",
doi = "10.1021/nl070613a",
language = "English",
volume = "7",
pages = "1643--1648",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "6",

}

Ishigami, M, Chen, JH, Cullen, WG, Fuhrer, MS & Williams, ED 2007, 'Atomic structure of graphene on SiO 2', Nano Letters, vol. 7, no. 6, pp. 1643-1648. https://doi.org/10.1021/nl070613a

Atomic structure of graphene on SiO 2. / Ishigami, Masa; Chen, J. H.; Cullen, W. G.; Fuhrer, M. S.; Williams, E. D.

In: Nano Letters, Vol. 7, No. 6, 01.06.2007, p. 1643-1648.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Atomic structure of graphene on SiO 2

AU - Ishigami, Masa

AU - Chen, J. H.

AU - Cullen, W. G.

AU - Fuhrer, M. S.

AU - Williams, E. D.

PY - 2007/6/1

Y1 - 2007/6/1

N2 - We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution scanning tunneling microscopy images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically clean graphene sheets.

AB - We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution scanning tunneling microscopy images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically clean graphene sheets.

UR - http://www.scopus.com/inward/record.url?scp=34547310313&partnerID=8YFLogxK

U2 - 10.1021/nl070613a

DO - 10.1021/nl070613a

M3 - Article

C2 - 17497819

AN - SCOPUS:34547310313

VL - 7

SP - 1643

EP - 1648

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 6

ER -

Ishigami M, Chen JH, Cullen WG, Fuhrer MS, Williams ED. Atomic structure of graphene on SiO 2. Nano Letters. 2007 Jun 1;7(6):1643-1648. https://doi.org/10.1021/nl070613a