Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy

Eita Tochigi, Scott Findlay, Eiji Okunishi, Teruyasu Mizoguchi, Atsutomo Nakamura, Naoya Shibata, Yuichi Ikuhara

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

Abstract

The structure of a b=<1100> dislocation formed in the {1100}<1120> 2° low-angle grain boundary of alumina was observed by scanning transmission electron microscopy (STEM). It was found that the <1100> dislocation dissociate-s into 1/3<1100> partial-dislocation triplets with two stacking faults on the { 1100 } plane. The atomic structure of the { 1100 } stacking faults was characterized by annular bright field STEM (ABF-STEM). The two stacking faults were found to have a stacking sequence of ...ABCCABC... and ...ABCBCAB..., which is consistent with a former report. ABF-STEM image simulation was performed using structure models with the {1100} stacking faults optimized by first-principles calculations. The overall features of the experimental and the simulated results agree with each other. However, slight differences in contrast were recognized in the vicinity of the stacking faults, suggesting that there are small differences between the observed structures and the theoretical models.

Original languageEnglish
Title of host publicationFrontiers in Materials Science (FMS 2015)
Subtitle of host publicationproceedings of the 2nd International Symposium on Frontiers in Materials Science
EditorsTomoyuki Yamamoto, Masato Yoshiya, Nam-Nhat Hoang, Markus Münzenberg
Place of PublicationUSA
PublisherAmerican Institute of Physics
Number of pages6
Volume1763
ISBN (Print)9780735414211
DOIs
Publication statusPublished - 26 Aug 2016
EventInternational Symposium on Frontiers in Materials Science (FMS 2015) - Waseda Univeristy, Tokyo, Japan
Duration: 19 Nov 201521 Nov 2015
Conference number: 2nd
http://www.cms.sci.waseda.ac.jp/fms2015/index.html

Conference

ConferenceInternational Symposium on Frontiers in Materials Science (FMS 2015)
Abbreviated titleFMS 2015
CountryJapan
CityTokyo
Period19/11/1521/11/15
Internet address

Cite this

Tochigi, E., Findlay, S., Okunishi, E., Mizoguchi, T., Nakamura, A., Shibata, N., & Ikuhara, Y. (2016). Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy. In T. Yamamoto, M. Yoshiya, N-N. Hoang, & M. Münzenberg (Eds.), Frontiers in Materials Science (FMS 2015): proceedings of the 2nd International Symposium on Frontiers in Materials Science (Vol. 1763). [050003] American Institute of Physics. https://doi.org/10.1063/1.4961356