Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy

Eita Tochigi; Scott Findlay; Eiji Okunishi; Teruyasu Mizoguchi; Atsutomo Nakamura; Naoya Shibata; Yuichi Ikuhara

doi:10.1063/1.4961356

Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy

Eita Tochigi, Scott Findlay, Eiji Okunishi, Teruyasu Mizoguchi, Atsutomo Nakamura, Naoya Shibata, Yuichi Ikuhara

School of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

4 Citations (Scopus)

Abstract

The structure of a b=<1100> dislocation formed in the {1100}<1120> 2° low-angle grain boundary of alumina was observed by scanning transmission electron microscopy (STEM). It was found that the <1100> dislocation dissociate-s into 1/3<1100> partial-dislocation triplets with two stacking faults on the { 1100 } plane. The atomic structure of the { 1100 } stacking faults was characterized by annular bright field STEM (ABF-STEM). The two stacking faults were found to have a stacking sequence of ...ABCCABC... and ...ABCBCAB..., which is consistent with a former report. ABF-STEM image simulation was performed using structure models with the {1100} stacking faults optimized by first-principles calculations. The overall features of the experimental and the simulated results agree with each other. However, slight differences in contrast were recognized in the vicinity of the stacking faults, suggesting that there are small differences between the observed structures and the theoretical models.

Original language	English
Title of host publication	Frontiers in Materials Science (FMS 2015)
Subtitle of host publication	proceedings of the 2nd International Symposium on Frontiers in Materials Science
Editors	Tomoyuki Yamamoto, Masato Yoshiya, Nam-Nhat Hoang, Markus Münzenberg
Place of Publication	USA
Publisher	American Institute of Physics
Number of pages	6
Volume	1763
ISBN (Print)	9780735414211
DOIs	https://doi.org/10.1063/1.4961356
Publication status	Published - 26 Aug 2016
Event	International Symposium on Frontiers in Materials Science (FMS 2015) - Waseda Univeristy, Tokyo, Japan Duration: 19 Nov 2015 → 21 Nov 2015 Conference number: 2nd http://www.cms.sci.waseda.ac.jp/fms2015/index.html

Conference

Conference	International Symposium on Frontiers in Materials Science (FMS 2015)
Abbreviated title	FMS 2015
Country/Territory	Japan
City	Tokyo
Period	19/11/15 → 21/11/15
Internet address	http://www.cms.sci.waseda.ac.jp/fms2015/index.html

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10.1063/1.4961356

Cite this

Tochigi, E., Findlay, S., Okunishi, E., Mizoguchi, T., Nakamura, A., Shibata, N., & Ikuhara, Y. (2016). Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy. In T. Yamamoto, M. Yoshiya, N.-N. Hoang, & M. Münzenberg (Eds.), Frontiers in Materials Science (FMS 2015): proceedings of the 2nd International Symposium on Frontiers in Materials Science (Vol. 1763). Article 050003 American Institute of Physics. https://doi.org/10.1063/1.4961356

Tochigi, Eita ; Findlay, Scott ; Okunishi, Eiji et al. / Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy. Frontiers in Materials Science (FMS 2015): proceedings of the 2nd International Symposium on Frontiers in Materials Science. editor / Tomoyuki Yamamoto ; Masato Yoshiya ; Nam-Nhat Hoang ; Markus Münzenberg. Vol. 1763 USA : American Institute of Physics, 2016.

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title = "Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy",

abstract = "The structure of a b=<1100> dislocation formed in the {1100}<1120> 2° low-angle grain boundary of alumina was observed by scanning transmission electron microscopy (STEM). It was found that the <1100> dislocation dissociate-s into 1/3<1100> partial-dislocation triplets with two stacking faults on the { 1100 } plane. The atomic structure of the { 1100 } stacking faults was characterized by annular bright field STEM (ABF-STEM). The two stacking faults were found to have a stacking sequence of ...ABCCABC... and ...ABCBCAB..., which is consistent with a former report. ABF-STEM image simulation was performed using structure models with the {1100} stacking faults optimized by first-principles calculations. The overall features of the experimental and the simulated results agree with each other. However, slight differences in contrast were recognized in the vicinity of the stacking faults, suggesting that there are small differences between the observed structures and the theoretical models.",

author = "Eita Tochigi and Scott Findlay and Eiji Okunishi and Teruyasu Mizoguchi and Atsutomo Nakamura and Naoya Shibata and Yuichi Ikuhara",

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Tochigi, E, Findlay, S, Okunishi, E, Mizoguchi, T, Nakamura, A, Shibata, N & Ikuhara, Y 2016, Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy. in T Yamamoto, M Yoshiya, N-N Hoang & M Münzenberg (eds), Frontiers in Materials Science (FMS 2015): proceedings of the 2nd International Symposium on Frontiers in Materials Science. vol. 1763, 050003, American Institute of Physics, USA, International Symposium on Frontiers in Materials Science (FMS 2015), Tokyo, Japan, 19/11/15. https://doi.org/10.1063/1.4961356

Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy. / Tochigi, Eita; Findlay, Scott; Okunishi, Eiji et al.
Frontiers in Materials Science (FMS 2015): proceedings of the 2nd International Symposium on Frontiers in Materials Science. ed. / Tomoyuki Yamamoto; Masato Yoshiya; Nam-Nhat Hoang; Markus Münzenberg. Vol. 1763 USA: American Institute of Physics, 2016. 050003.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

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T1 - Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy

AU - Tochigi, Eita

AU - Findlay, Scott

AU - Okunishi, Eiji

AU - Mizoguchi, Teruyasu

AU - Nakamura, Atsutomo

AU - Shibata, Naoya

AU - Ikuhara, Yuichi

N1 - Conference code: 2nd

PY - 2016/8/26

Y1 - 2016/8/26

N2 - The structure of a b=<1100> dislocation formed in the {1100}<1120> 2° low-angle grain boundary of alumina was observed by scanning transmission electron microscopy (STEM). It was found that the <1100> dislocation dissociate-s into 1/3<1100> partial-dislocation triplets with two stacking faults on the { 1100 } plane. The atomic structure of the { 1100 } stacking faults was characterized by annular bright field STEM (ABF-STEM). The two stacking faults were found to have a stacking sequence of ...ABCCABC... and ...ABCBCAB..., which is consistent with a former report. ABF-STEM image simulation was performed using structure models with the {1100} stacking faults optimized by first-principles calculations. The overall features of the experimental and the simulated results agree with each other. However, slight differences in contrast were recognized in the vicinity of the stacking faults, suggesting that there are small differences between the observed structures and the theoretical models.

AB - The structure of a b=<1100> dislocation formed in the {1100}<1120> 2° low-angle grain boundary of alumina was observed by scanning transmission electron microscopy (STEM). It was found that the <1100> dislocation dissociate-s into 1/3<1100> partial-dislocation triplets with two stacking faults on the { 1100 } plane. The atomic structure of the { 1100 } stacking faults was characterized by annular bright field STEM (ABF-STEM). The two stacking faults were found to have a stacking sequence of ...ABCCABC... and ...ABCBCAB..., which is consistent with a former report. ABF-STEM image simulation was performed using structure models with the {1100} stacking faults optimized by first-principles calculations. The overall features of the experimental and the simulated results agree with each other. However, slight differences in contrast were recognized in the vicinity of the stacking faults, suggesting that there are small differences between the observed structures and the theoretical models.

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SN - 9780735414211

VL - 1763

BT - Frontiers in Materials Science (FMS 2015)

A2 - Yamamoto, Tomoyuki

A2 - Yoshiya, Masato

A2 - Hoang, Nam-Nhat

A2 - Münzenberg, Markus

PB - American Institute of Physics

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ER -

Tochigi E, Findlay S, Okunishi E, Mizoguchi T, Nakamura A, Shibata N et al. Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy. In Yamamoto T, Yoshiya M, Hoang NN, Münzenberg M, editors, Frontiers in Materials Science (FMS 2015): proceedings of the 2nd International Symposium on Frontiers in Materials Science. Vol. 1763. USA: American Institute of Physics. 2016. 050003 doi: 10.1063/1.4961356

Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy

Abstract

Conference

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Imaging light elements, dopants and vacancies

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Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy

Abstract

Conference

Access to Document

Other files and links

Projects

Imaging light elements, dopants and vacancies

Cite this