Atomic - scale study of model CdTe grain boundaries

Tadas Paulauskas; Fatih Sen; Cyrus  Sun; Edward Barnard; Moon Kim; Sivalingam Sivananthan; Maria Chan; Robert Klie

doi:10.1109/PVSC.2016.7750358

Atomic - scale study of model CdTe grain boundaries

Tadas Paulauskas, Fatih Sen, Cyrus Sun, Edward Barnard, Moon Kim, Sivalingam Sivananthan, Maria Chan, Robert Klie

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

Poly-crystalline CdTe-based thin film photovoltaic (PV) devices are the forerunners in commercialized solar cell technology. Despite the commercial success, best laboratory cells achieve ∼21.5% power conversion efficiency and hence are still ∼10% short of theoretical limit. In this collaborative research project we investigate effects of the grain boundaries via wafer-bonded CdTe bicrystals. Lifetime measurements are carried out using two-photon absorption, while atomic resolution imaging and first-principles calculations are used to correlate the results. Here we present fundamental atomic-scale studies of several model grain boundaries.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC 2016)
Subtitle of host publication	Portland, Oregon, USA, 5-10 June 2016 [Proceedings]
Place of Publication	Piscataway, NJ
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	3664-3666
Number of pages	3
ISBN (Electronic)	9781509027248
ISBN (Print)	9781509027255
DOIs	https://doi.org/10.1109/PVSC.2016.7750358
Publication status	Published - 18 Nov 2016
Externally published	Yes
Event	IEEE Photovoltaic Specialists Conference 2016 - Portland, United States of America Duration: 5 Jun 2016 → 10 Jun 2016 Conference number: 43rd https://ieeexplore.ieee.org/xpl/conhome/7701171/proceeding (Proceedings)

Conference

Conference	IEEE Photovoltaic Specialists Conference 2016
Abbreviated title	PVSC 2016
Country/Territory	United States of America
City	Portland
Period	5/06/16 → 10/06/16
Internet address	https://ieeexplore.ieee.org/xpl/conhome/7701171/proceeding (Proceedings)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2016.7750358

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Paulauskas, T., Sen, F., Sun, C., Barnard, E., Kim, M., Sivananthan, S., Chan, M., & Klie, R. (2016). Atomic - scale study of model CdTe grain boundaries. In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC 2016): Portland, Oregon, USA, 5-10 June 2016 [Proceedings] (pp. 3664-3666). Article 7750358 IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2016.7750358

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title = "Atomic - scale study of model CdTe grain boundaries",

abstract = "Poly-crystalline CdTe-based thin film photovoltaic (PV) devices are the forerunners in commercialized solar cell technology. Despite the commercial success, best laboratory cells achieve ∼21.5% power conversion efficiency and hence are still ∼10% short of theoretical limit. In this collaborative research project we investigate effects of the grain boundaries via wafer-bonded CdTe bicrystals. Lifetime measurements are carried out using two-photon absorption, while atomic resolution imaging and first-principles calculations are used to correlate the results. Here we present fundamental atomic-scale studies of several model grain boundaries.",

author = "Tadas Paulauskas and Fatih Sen and Cyrus Sun and Edward Barnard and Moon Kim and Sivalingam Sivananthan and Maria Chan and Robert Klie",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7750358",

language = "English",

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pages = "3664--3666",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC 2016)",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States of America",

note = "IEEE Photovoltaic Specialists Conference 2016, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

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Paulauskas, T, Sen, F, Sun, C, Barnard, E, Kim, M, Sivananthan, S, Chan, M & Klie, R 2016, Atomic - scale study of model CdTe grain boundaries. in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC 2016): Portland, Oregon, USA, 5-10 June 2016 [Proceedings]., 7750358, IEEE, Institute of Electrical and Electronics Engineers, Piscataway, NJ, pp. 3664-3666, IEEE Photovoltaic Specialists Conference 2016, Portland, Oregon, United States of America, 5/06/16. https://doi.org/10.1109/PVSC.2016.7750358

Atomic - scale study of model CdTe grain boundaries. / Paulauskas, Tadas; Sen, Fatih; Sun, Cyrus et al.
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC 2016): Portland, Oregon, USA, 5-10 June 2016 [Proceedings]. Piscataway, NJ: IEEE, Institute of Electrical and Electronics Engineers, 2016. p. 3664-3666 7750358.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

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T1 - Atomic - scale study of model CdTe grain boundaries

AU - Paulauskas, Tadas

AU - Sen, Fatih

AU - Sun, Cyrus

AU - Barnard, Edward

AU - Kim, Moon

AU - Sivananthan, Sivalingam

AU - Chan, Maria

AU - Klie, Robert

N1 - Conference code: 43rd

PY - 2016/11/18

Y1 - 2016/11/18

N2 - Poly-crystalline CdTe-based thin film photovoltaic (PV) devices are the forerunners in commercialized solar cell technology. Despite the commercial success, best laboratory cells achieve ∼21.5% power conversion efficiency and hence are still ∼10% short of theoretical limit. In this collaborative research project we investigate effects of the grain boundaries via wafer-bonded CdTe bicrystals. Lifetime measurements are carried out using two-photon absorption, while atomic resolution imaging and first-principles calculations are used to correlate the results. Here we present fundamental atomic-scale studies of several model grain boundaries.

AB - Poly-crystalline CdTe-based thin film photovoltaic (PV) devices are the forerunners in commercialized solar cell technology. Despite the commercial success, best laboratory cells achieve ∼21.5% power conversion efficiency and hence are still ∼10% short of theoretical limit. In this collaborative research project we investigate effects of the grain boundaries via wafer-bonded CdTe bicrystals. Lifetime measurements are carried out using two-photon absorption, while atomic resolution imaging and first-principles calculations are used to correlate the results. Here we present fundamental atomic-scale studies of several model grain boundaries.

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SN - 9781509027255

SP - 3664

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BT - 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC 2016)

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - Piscataway, NJ

T2 - IEEE Photovoltaic Specialists Conference 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Paulauskas T, Sen F, Sun C, Barnard E, Kim M, Sivananthan S et al. Atomic - scale study of model CdTe grain boundaries. In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC 2016): Portland, Oregon, USA, 5-10 June 2016 [Proceedings]. Piscataway, NJ: IEEE, Institute of Electrical and Electronics Engineers. 2016. p. 3664-3666. 7750358 doi: 10.1109/PVSC.2016.7750358

Atomic - scale study of model CdTe grain boundaries

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Atomistic study of model CdTe grain boundaries

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