Atomic-scale domain mediation in Nd-doped BiFeO3 film

Qian Zhan, Hongliang Wang, Kok Hong Tan, Yifan Zhang, Xiaokuo Er, Wei Sea Chang, Farong Wan

Research output: Contribution to journalArticleResearchpeer-review

Abstract

A large number of applications involving ferroelectric materials are substantially influenced by domain walls (DWs). Especially, charged DWs (CDWs) show great potentials in controlling the switching mechanism and the electric and piezoelectric properties of ferroelectric materials. In the present 5% Nd-doped BiFeO3 film, besides the uniformly downward polarization in the film matrix, special domain configurations including 71° CDW and the adjacent inserting nanodomain as well as the resulting DW junction near the film surface have been quantitatively resolved by aberration-corrected scanning transmission electron microscopy. Direct polarization mapping of DWs combined with the unit-cell-wise strain map at an atomic scale demonstrate the accumulation of Nd at the CDWs. The favorable formation of the observed local domain configurations depends on the minimization of the total DW energy and the screening of bound charges accumulated at the local surface of the film.

Original languageEnglish
Pages (from-to)4127-4133
Number of pages7
JournalACS Applied Electronic Materials
Volume2
Issue number12
DOIs
Publication statusPublished - 22 Dec 2020

Keywords

  • Aberration-corrected STEM
  • Accumulation of Nd
  • Domain configurations
  • Nd-doped BiFeO
  • Structural characterization

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