Atomic-precision architectures for the high-fidelity spin read-out of phosphorus donors in silicon

Bent Weber, Thomas F. Watson, Michelle Y. Simmons

Research output: Contribution to conferenceAbstract

Abstract

We report on recent progress on complex device architectures [1, 2] for the detection of individual and exchange coupled electron spins bound by phosphorus donors in silicon. Patterned by scanning tunneling microscopy (STM) hydrogen lithography, these architectures are constructed from fundamental building blocks such as atomic-scale wires [3, 4] and quantum dots [5, 6], and are shown to allow for high-fidelity detection of single electronic charges and spins confined to atomic length scales [1, 2].

Original languageEnglish
Pages144-145
Number of pages2
DOIs
Publication statusPublished - 27 Sep 2016
EventIEEE Silicon Nanoelectronics Workshop 2016 - Hilton Hawaiian Village, Honolulu HI, United States of America
Duration: 12 Jun 201613 Jun 2016
http://snw2016.epfl.ch/

Workshop

WorkshopIEEE Silicon Nanoelectronics Workshop 2016
Abbreviated titleSNW 2016
CountryUnited States of America
CityHonolulu HI
Period12/06/1613/06/16
Internet address

Cite this

Weber, B., Watson, T. F., & Simmons, M. Y. (2016). Atomic-precision architectures for the high-fidelity spin read-out of phosphorus donors in silicon. 144-145. Abstract from IEEE Silicon Nanoelectronics Workshop 2016, Honolulu HI, United States of America. https://doi.org/10.1109/SNW.2016.7578024