Abstract
Atomic layer deposition (ALD) can synthesise materials with atomic-scale precision. The ability to tune the material composition, film thickness with excellent conformality, allow low-temperature processing, and in-situ real-time monitoring makes this technique very appealing for a wide range of applications. In this review, we focus on the application of ALD layers in a wide range of solar cells. We focus on industrial silicon, thin film, organic and quantum dot solar cells. It is shown that the merits of ALD have already been exploited in a wide range of solar cells at the lab scale and that ALD is already applied in high-volume manufacturing of silicon solar cells.
| Original language | English |
|---|---|
| Pages (from-to) | 204-226 |
| Number of pages | 23 |
| Journal | Nano Materials Science |
| Volume | 2 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Sept 2020 |
| Externally published | Yes |
Keywords
- Atomic layer deposition
- Carrier selectivity
- Contact resistivity
- Solar cells
- Surface passivation
- Transition metal oxides
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