TY - JOUR
T1 - Analytical optimization of AlGaN/GaN/AlGaN DH-HEMT device performance based on buffer characteristics
AU - Rahman, Sharidya
AU - Hatta, Sharifah Wan Muhamad
AU - Soin, Norhayati
N1 - Funding Information:
The authors are grateful for the financial support provided by the Science Fund grant of Ministry of Science, Technology and Innovation RU GRANT (UM.0000482/HRU.OP.RF).
Publisher Copyright:
© 2019 The Electrochemical Society.
PY - 2019/3/8
Y1 - 2019/3/8
N2 - In this paper, conventional DH-HEMT has been optimized extensively to achieve improved breakdown characteristics while retaining efficient confinement of 2DEG in the buffer and channel. Critical Figures of Merit (FOMs) including DC and stress was analyzed in addition using Synopsys' Sentaurus TCAD tool, to address recent challenges with single heterojunction HFET. Four different epitaxial designs were tactically manipulated by considering different materials for substrate and buffer. Investigation was executed from multiple aspects. Significant observation includes enhancement of breakdown voltage to 580V with extremely low gate leakage current and adequate carrier mobility in the channel. This is due to suppression of parasitic conduction path usually observed in conventional device. However, low DC output was recorded. The proposed structure was further optimized through important geometric consideration rendering its application in power switching, next generation communication system and radar application. Extensive TCAD modelling was implemented to precisely ensure complexity of heterostructure devices.
AB - In this paper, conventional DH-HEMT has been optimized extensively to achieve improved breakdown characteristics while retaining efficient confinement of 2DEG in the buffer and channel. Critical Figures of Merit (FOMs) including DC and stress was analyzed in addition using Synopsys' Sentaurus TCAD tool, to address recent challenges with single heterojunction HFET. Four different epitaxial designs were tactically manipulated by considering different materials for substrate and buffer. Investigation was executed from multiple aspects. Significant observation includes enhancement of breakdown voltage to 580V with extremely low gate leakage current and adequate carrier mobility in the channel. This is due to suppression of parasitic conduction path usually observed in conventional device. However, low DC output was recorded. The proposed structure was further optimized through important geometric consideration rendering its application in power switching, next generation communication system and radar application. Extensive TCAD modelling was implemented to precisely ensure complexity of heterostructure devices.
UR - https://www.scopus.com/pages/publications/85081141049
U2 - 10.1149/2.0261902jss
DO - 10.1149/2.0261902jss
M3 - Article
AN - SCOPUS:85081141049
SN - 2162-8769
VL - 8
SP - P165-P173
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 2
ER -