Analytical optimization of AlGaN/GaN/AlGaN DH-HEMT device performance based on buffer characteristics

Sharidya Rahman, Sharifah Wan Muhamad Hatta, Norhayati Soin

Research output: Contribution to journalArticleResearchpeer-review

4 Citations (Scopus)


In this paper, conventional DH-HEMT has been optimized extensively to achieve improved breakdown characteristics while retaining efficient confinement of 2DEG in the buffer and channel. Critical Figures of Merit (FOMs) including DC and stress was analyzed in addition using Synopsys' Sentaurus TCAD tool, to address recent challenges with single heterojunction HFET. Four different epitaxial designs were tactically manipulated by considering different materials for substrate and buffer. Investigation was executed from multiple aspects. Significant observation includes enhancement of breakdown voltage to 580V with extremely low gate leakage current and adequate carrier mobility in the channel. This is due to suppression of parasitic conduction path usually observed in conventional device. However, low DC output was recorded. The proposed structure was further optimized through important geometric consideration rendering its application in power switching, next generation communication system and radar application. Extensive TCAD modelling was implemented to precisely ensure complexity of heterostructure devices.

Original languageEnglish
Pages (from-to)P165-P173
Number of pages10
JournalECS Journal of Solid State Science and Technology
Issue number2
Publication statusPublished - 8 Mar 2019
Externally publishedYes

Cite this