Analysis of thermally-annealed InGaN quantum wells for light-emitting diodes

Xuechen Jiao, Peng Zhao, Hongping Zhao

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

Abstract

Thermally-annealed InGaN quantum wells (QWs) with various interdiffusion lengths (L d ) are numerically analyzed as improved active region for Light-Emitting Diodes (LEDs). The calculations of the band structure, wavefunction for electrons and holes are based on a self-consistent 6-band k·p method taking into account the valence band mixing, strain effect, spontaneous and piezoelectric polarizations and carrier screening effect. The spontaneous emission radiative recombination rate (R sp ) was calculated for thermally-annealed 3-nm In 0.25 Ga 0.75 N QWs with various interdiffusion lengths (L d ), as compared to that of the conventional InGaN QWs emitting at the similar wavelength. Studies show that the electron-hole wavefunction overlap is significantly enhanced for the thermally-annealed InGaN QWs, which results in the improved spontaneous emission radiative recombination rate for enhancing LED output power.

Original languageEnglish
Title of host publication2012 IEEE Energytech, Energytech 2012
DOIs
Publication statusPublished - 12 Nov 2012
Externally publishedYes
Event2012 IEEE Energytech, Energytech 2012 - Cleveland, OH, United States of America
Duration: 29 May 201231 May 2012

Publication series

Name2012 IEEE Energytech, Energytech 2012

Conference

Conference2012 IEEE Energytech, Energytech 2012
CountryUnited States of America
CityCleveland, OH
Period29/05/1231/05/12

Keywords

  • InGaN QWs
  • interdiffusion
  • Light-Emitting Diode
  • rapid thermal annealing

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