Analysis of thermally-annealed InGaN quantum wells for light-emitting diodes

Xuechen Jiao, Peng Zhao, Hongping Zhao

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther


Thermally-annealed InGaN quantum wells (QWs) with various interdiffusion lengths (L d ) are numerically analyzed as improved active region for Light-Emitting Diodes (LEDs). The calculations of the band structure, wavefunction for electrons and holes are based on a self-consistent 6-band k·p method taking into account the valence band mixing, strain effect, spontaneous and piezoelectric polarizations and carrier screening effect. The spontaneous emission radiative recombination rate (R sp ) was calculated for thermally-annealed 3-nm In 0.25 Ga 0.75 N QWs with various interdiffusion lengths (L d ), as compared to that of the conventional InGaN QWs emitting at the similar wavelength. Studies show that the electron-hole wavefunction overlap is significantly enhanced for the thermally-annealed InGaN QWs, which results in the improved spontaneous emission radiative recombination rate for enhancing LED output power.

Original languageEnglish
Title of host publication2012 IEEE Energytech, Energytech 2012
Publication statusPublished - 12 Nov 2012
Externally publishedYes
Event2012 IEEE Energytech, Energytech 2012 - Cleveland, OH, United States of America
Duration: 29 May 201231 May 2012

Publication series

Name2012 IEEE Energytech, Energytech 2012


Conference2012 IEEE Energytech, Energytech 2012
Country/TerritoryUnited States of America
CityCleveland, OH


  • InGaN QWs
  • interdiffusion
  • Light-Emitting Diode
  • rapid thermal annealing

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