TY - GEN
T1 - Analysis of thermally-annealed InGaN quantum wells for light-emitting diodes
AU - Jiao, Xuechen
AU - Zhao, Peng
AU - Zhao, Hongping
PY - 2012/11/12
Y1 - 2012/11/12
N2 -
Thermally-annealed InGaN quantum wells (QWs) with various interdiffusion lengths (L
d
) are numerically analyzed as improved active region for Light-Emitting Diodes (LEDs). The calculations of the band structure, wavefunction for electrons and holes are based on a self-consistent 6-band k·p method taking into account the valence band mixing, strain effect, spontaneous and piezoelectric polarizations and carrier screening effect. The spontaneous emission radiative recombination rate (R
sp
) was calculated for thermally-annealed 3-nm In
0.25
Ga
0.75
N QWs with various interdiffusion lengths (L
d
), as compared to that of the conventional InGaN QWs emitting at the similar wavelength. Studies show that the electron-hole wavefunction overlap is significantly enhanced for the thermally-annealed InGaN QWs, which results in the improved spontaneous emission radiative recombination rate for enhancing LED output power.
AB -
Thermally-annealed InGaN quantum wells (QWs) with various interdiffusion lengths (L
d
) are numerically analyzed as improved active region for Light-Emitting Diodes (LEDs). The calculations of the band structure, wavefunction for electrons and holes are based on a self-consistent 6-band k·p method taking into account the valence band mixing, strain effect, spontaneous and piezoelectric polarizations and carrier screening effect. The spontaneous emission radiative recombination rate (R
sp
) was calculated for thermally-annealed 3-nm In
0.25
Ga
0.75
N QWs with various interdiffusion lengths (L
d
), as compared to that of the conventional InGaN QWs emitting at the similar wavelength. Studies show that the electron-hole wavefunction overlap is significantly enhanced for the thermally-annealed InGaN QWs, which results in the improved spontaneous emission radiative recombination rate for enhancing LED output power.
KW - InGaN QWs
KW - interdiffusion
KW - Light-Emitting Diode
KW - rapid thermal annealing
UR - http://www.scopus.com/inward/record.url?scp=84868525974&partnerID=8YFLogxK
U2 - 10.1109/EnergyTech.2012.6304639
DO - 10.1109/EnergyTech.2012.6304639
M3 - Conference Paper
AN - SCOPUS:84868525974
SN - 9781467318365
T3 - 2012 IEEE Energytech, Energytech 2012
BT - 2012 IEEE Energytech, Energytech 2012
T2 - 2012 IEEE Energytech, Energytech 2012
Y2 - 29 May 2012 through 31 May 2012
ER -