Abstract
In this paper, the temperature dependence of the turn-on characteristics of Schottky barrier diodes fabricated on (201) oriented n-type β-Ga2O3 is reported. The barrier height (qΦbn) and ideality factor (n) for Ni- β-Ga2O3 was found to be 1.08±0.05 eV and 1.19 respectively at room temperature. The effective Richardson constant (A∗∗) is determined to be 42.96 A cm-2 K-2, in close agreement with the theoretical value. At low temperatures (85-273 K), the current-voltage characteristics reveal a strong temperature dependence of Schottky barrier heights and ideality factors and a corresponding deviation from the barrier height extracted from capacitance-voltage measurements. A detailed analysis is presented, which suggest that these effects can be attributed to a large barrier inhomogeneity at metal/β-Ga2O3 interfaces, possibly resulting from interfacial defects, which can be modeled using a potential fluctuation model.
Original language | English |
---|---|
Article number | 115002 |
Number of pages | 6 |
Journal | Semiconductor Science and Technology |
Volume | 31 |
Issue number | 11 |
DOIs | |
Publication status | Published - 27 Sept 2016 |
Externally published | Yes |
Keywords
- barrier height (qΦ)
- barrier inhomogeneity
- beta-Gallium oxide (β-GaO)
- ideality factor (n)
- Schottky barrier diode
- wide band gap semiconductor