Analysis of temperature dependent forward characteristics of Ni/(201) β-Ga2O3 Schottky diodes

Asanka Jayawardena, Ayayi C. Ahyi, Sarit Dhar

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Abstract

In this paper, the temperature dependence of the turn-on characteristics of Schottky barrier diodes fabricated on (201) oriented n-type β-Ga2O3 is reported. The barrier height (qΦbn) and ideality factor (n) for Ni- β-Ga2O3 was found to be 1.08±0.05 eV and 1.19 respectively at room temperature. The effective Richardson constant (A∗∗) is determined to be 42.96 A cm-2 K-2, in close agreement with the theoretical value. At low temperatures (85-273 K), the current-voltage characteristics reveal a strong temperature dependence of Schottky barrier heights and ideality factors and a corresponding deviation from the barrier height extracted from capacitance-voltage measurements. A detailed analysis is presented, which suggest that these effects can be attributed to a large barrier inhomogeneity at metal/β-Ga2O3 interfaces, possibly resulting from interfacial defects, which can be modeled using a potential fluctuation model.

Original languageEnglish
Article number115002
Number of pages6
JournalSemiconductor Science and Technology
Volume31
Issue number11
DOIs
Publication statusPublished - 27 Sep 2016
Externally publishedYes

Keywords

  • barrier height (qΦ)
  • barrier inhomogeneity
  • beta-Gallium oxide (β-GaO)
  • ideality factor (n)
  • Schottky barrier diode
  • wide band gap semiconductor

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