The effects of position and thickness of the delta layer in InGaN-Delta-InN quantum wells were analyzed for light-emitting diodes, and both parameters have strong effects on its spontaneous emission rates.
|Title of host publication||Asia Communications and Photonics Conference, ACP|
|Publication status||Published - 1 Jan 2012|
|Event||Asia Communications and Photonics Conference 2012 - Guangzhou, China|
Duration: 7 Nov 2012 → 10 Nov 2012
|Conference||Asia Communications and Photonics Conference 2012|
|Abbreviated title||ACP 2012|
|Period||7/11/12 → 10/11/12|