Abstract
The effects of position and thickness of the delta layer in InGaN-Delta-InN quantum wells were analyzed for light-emitting diodes, and both parameters have strong effects on its spontaneous emission rates.
| Original language | English |
|---|---|
| Title of host publication | Asia Communications and Photonics Conference, ACP |
| Publication status | Published - 1 Jan 2012 |
| Externally published | Yes |
| Event | Asia Communications and Photonics Conference 2012 - Guangzhou, China Duration: 7 Nov 2012 → 10 Nov 2012 https://www.osapublishing.org/conference.cfm?meetingid=144&yr=2012 (Proceedings) |
Conference
| Conference | Asia Communications and Photonics Conference 2012 |
|---|---|
| Abbreviated title | ACP 2012 |
| Country/Territory | China |
| City | Guangzhou |
| Period | 7/11/12 → 10/11/12 |
| Internet address |