Analysis of position and thickness dependences of delta layer in InGaN-delta-InN quantum wells light-emitting diodes

Hongping Zhao, Xuechen Jiao, Nelson Tansu

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

2 Citations (Scopus)


The effects of position and thickness of the delta layer in InGaN-Delta-InN quantum wells were analyzed for light-emitting diodes, and both parameters have strong effects on its spontaneous emission rates.

Original languageEnglish
Title of host publicationAsia Communications and Photonics Conference, ACP
Publication statusPublished - 1 Jan 2012
Externally publishedYes
EventAsia Communications and Photonics Conference 2012 - Guangzhou, China
Duration: 7 Nov 201210 Nov 2012 (Proceedings)


ConferenceAsia Communications and Photonics Conference 2012
Abbreviated titleACP 2012
Internet address

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