Analysis of position and thickness dependences of delta layer in InGaN-delta-InN quantum wells light-emitting diodes

Hongping Zhao; Xuechen Jiao; Nelson Tansu

Analysis of position and thickness dependences of delta layer in InGaN-delta-InN quantum wells light-emitting diodes

Hongping Zhao, Xuechen Jiao, Nelson Tansu

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

The effects of position and thickness of the delta layer in InGaN-Delta-InN quantum wells were analyzed for light-emitting diodes, and both parameters have strong effects on its spontaneous emission rates.

Original language	English
Title of host publication	Asia Communications and Photonics Conference, ACP
Publication status	Published - 1 Jan 2012
Externally published	Yes
Event	Asia Communications and Photonics Conference 2012 - Guangzhou, China Duration: 7 Nov 2012 → 10 Nov 2012 https://www.osapublishing.org/conference.cfm?meetingid=144&yr=2012 (Proceedings)

Conference

Conference	Asia Communications and Photonics Conference 2012
Abbreviated title	ACP 2012
Country	China
City	Guangzhou
Period	7/11/12 → 10/11/12
Internet address	https://www.osapublishing.org/conference.cfm?meetingid=144&yr=2012 (Proceedings)

Access to Document

Link to publication in Scopus

Cite this

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title = "Analysis of position and thickness dependences of delta layer in InGaN-delta-InN quantum wells light-emitting diodes",

abstract = "The effects of position and thickness of the delta layer in InGaN-Delta-InN quantum wells were analyzed for light-emitting diodes, and both parameters have strong effects on its spontaneous emission rates.",

author = "Hongping Zhao and Xuechen Jiao and Nelson Tansu",

year = "2012",

month = jan,

day = "1",

language = "English",

booktitle = "Asia Communications and Photonics Conference, ACP",

note = "Asia Communications and Photonics Conference 2012, ACP 2012 ; Conference date: 07-11-2012 Through 10-11-2012",

url = "https://www.osapublishing.org/conference.cfm?meetingid=144&yr=2012",

}

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T1 - Analysis of position and thickness dependences of delta layer in InGaN-delta-InN quantum wells light-emitting diodes

AU - Zhao, Hongping

AU - Jiao, Xuechen

AU - Tansu, Nelson

PY - 2012/1/1

Y1 - 2012/1/1

N2 - The effects of position and thickness of the delta layer in InGaN-Delta-InN quantum wells were analyzed for light-emitting diodes, and both parameters have strong effects on its spontaneous emission rates.

AB - The effects of position and thickness of the delta layer in InGaN-Delta-InN quantum wells were analyzed for light-emitting diodes, and both parameters have strong effects on its spontaneous emission rates.

UR - http://www.scopus.com/inward/record.url?scp=84875200306&partnerID=8YFLogxK

M3 - Conference Paper

AN - SCOPUS:84875200306

BT - Asia Communications and Photonics Conference, ACP

T2 - Asia Communications and Photonics Conference 2012

Y2 - 7 November 2012 through 10 November 2012

ER -