An integrated LVDS transmitter in 0.18-μm CMOS technology with high immunity to EMI

Gilbert Andrew Matig-a, Mehmet Rasit Yuce, Jean-Michel Redoute

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This paper presents an on-chip design topology that compensates the effects of electromagnetic interference (EMI) in a low-voltage differential signaling (LVDS) transmitter. The proposed structure enables the transmitter to maintain a wide differential opening by achieving a superior common-mode level independent driving current and common-mode feedback closed-loop gain. Direct power injection measurements illustrate that the proposed LVDS transmitter structure demonstrates a superior EMI immunity as it maintains an eye opening of at least 100 mVp-p in presence of a conductive EMI injection ranging from 150 to 2 GHz with an amplitude of up to 9 Vp-p. Additionally, transverse electromagnetic cell measurements validate the radiated immunity of the proposed integrated LVDS transmitter in presence of an EMI injection of 30 dBm (150 kHz-2 GHz). This EMI robust LVDS transmitter was designed using the UMC 0.18-μm CMOS process.

Original languageEnglish
Article number6914534
Pages (from-to)128-134
Number of pages7
JournalIEEE Transactions on Electromagnetic Compatibility
Issue number1
Publication statusPublished - 1 Feb 2015


  • Analog integrated circuits
  • CMOS integrated circuits
  • electromagnetic interference
  • interference suppression

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