Aligned silicon nanowires with fine-tunable tilting angles by metal-assisted chemical etching on off-cut wafers

Jie Ma, Liping Wen, Zhichao Dong, Tong Zhang, Shutao Wang, Lei Jiang

Research output: Contribution to journalArticleResearchpeer-review

8 Citations (Scopus)

Abstract

The morphology control of aligned silicon nanowires (SiNWs) is highly desirable as SiNWs demonstrated high prospect in a variety of applications. Besides the control over length, shape and distribution of aligned SiNWs, the fine-tuning of tilting angles thereof also attracted intense interest. Up to now, only several discrete tilting angles have been reported. In this Letter, the ability to fine-tune the tilting angle of SiNWs is demonstrated and the range that can be achieved is identified. Our technique employs the anisotropic characteristic of the etching process using custom-produced off-cut Si wafers of various orientations as substrates. With this technique, a uniquely favoured etching direction can result and the tilting angle can be precisely controlled. Tilted SiNWs with tilting angles from 0° to 50° relative to the wafer normal were obtained. The mechanism of the tilting angle manipulation is also discussed.

Original languageEnglish
Pages (from-to)655-658
Number of pages4
JournalPhysica Status Solidi - Rapid Research Letters
Volume7
Issue number9
DOIs
Publication statusPublished - Sep 2013
Externally publishedYes

Keywords

  • Chemical etching
  • Nanostructures
  • Nanowires
  • Silicon

Cite this