Air-stable doping of Bi2Se3 by MoO3 into the topological regime

Mark Edmonds, John Hellerstedt, Anton Tadich, A. Schenk, Kane Michael O'Donnell, Jacob Tosado, Nicholas P Butch, Paul Syers, Johnpierre Paglione, Michael Fuhrer

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review


We study vacuum deposition of molecular MoO3 as an acceptor surface transfer dopant for topological insulator Bi2Se3. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi2Se3 single crystals and in-situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. MoO3 is an efficient acceptor, lowering the surface Fermi energy to within -100 meV of the Dirac point, in the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer.

Original languageEnglish
Title of host publicationCOMMAD 2014 Conference Proceedings
Subtitle of host publicationConference on Optoelectronic and Microelectronic Materials and Devices
EditorsLorenzo Faraone, Mariusz Martyniuk
Place of PublicationPiscataway NJ USA
PublisherIEEE, Institute of Electrical and Electronics Engineers
Number of pages4
ISBN (Print)9781479968671
Publication statusPublished - 10 Feb 2014
EventConference on Optoelectronic and Microelectronic Materials and Devices 2014 - The University of Western Australia, Perth, Australia
Duration: 14 Dec 201417 Dec 2014 (Proceedings)


ConferenceConference on Optoelectronic and Microelectronic Materials and Devices 2014
Abbreviated titleCOMMAD 2014
Internet address


  • Bi2Se3
  • molecular doping
  • MoO3

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