Air-stable doping of Bi2Se3 by MoO3 into the topological regime

Mark Edmonds, John Hellerstedt, Anton Tadich, A. Schenk, Kane Michael O'Donnell, Jacob Tosado, Nicholas P Butch, Paul Syers, Johnpierre Paglione, Michael Fuhrer

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

Abstract

We study vacuum deposition of molecular MoO3 as an acceptor surface transfer dopant for topological insulator Bi2Se3. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi2Se3 single crystals and in-situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. MoO3 is an efficient acceptor, lowering the surface Fermi energy to within -100 meV of the Dirac point, in the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer.

Original languageEnglish
Title of host publicationCOMMAD 2014 Conference Proceedings
Subtitle of host publicationConference on Optoelectronic and Microelectronic Materials and Devices
EditorsLorenzo Faraone, Mariusz Martyniuk
Place of PublicationPiscataway NJ USA
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages56-59
Number of pages4
ISBN (Print)9781479968671
DOIs
Publication statusPublished - 10 Feb 2014
EventConference on Optoelectronic and Microelectronic Materials and Devices 2014 - The University of Western Australia, Perth WA, Australia
Duration: 14 Dec 201417 Dec 2014
http://mrg.ee.uwa.edu.au/commad14.php

Conference

ConferenceConference on Optoelectronic and Microelectronic Materials and Devices 2014
Abbreviated titleCOMMAD 2014
CountryAustralia
CityPerth WA
Period14/12/1417/12/14
Internet address

Keywords

  • Bi2Se3
  • molecular doping
  • MoO3

Cite this

Edmonds, M., Hellerstedt, J., Tadich, A., Schenk, A., O'Donnell, K. M., Tosado, J., ... Fuhrer, M. (2014). Air-stable doping of Bi2Se3 by MoO3 into the topological regime. In L. Faraone, & M. Martyniuk (Eds.), COMMAD 2014 Conference Proceedings: Conference on Optoelectronic and Microelectronic Materials and Devices (pp. 56-59). [7038651] Piscataway NJ USA: IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/COMMAD.2014.7038651
Edmonds, Mark ; Hellerstedt, John ; Tadich, Anton ; Schenk, A. ; O'Donnell, Kane Michael ; Tosado, Jacob ; Butch, Nicholas P ; Syers, Paul ; Paglione, Johnpierre ; Fuhrer, Michael. / Air-stable doping of Bi2Se3 by MoO3 into the topological regime. COMMAD 2014 Conference Proceedings: Conference on Optoelectronic and Microelectronic Materials and Devices. editor / Lorenzo Faraone ; Mariusz Martyniuk. Piscataway NJ USA : IEEE, Institute of Electrical and Electronics Engineers, 2014. pp. 56-59
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abstract = "We study vacuum deposition of molecular MoO3 as an acceptor surface transfer dopant for topological insulator Bi2Se3. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi2Se3 single crystals and in-situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. MoO3 is an efficient acceptor, lowering the surface Fermi energy to within -100 meV of the Dirac point, in the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer.",
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author = "Mark Edmonds and John Hellerstedt and Anton Tadich and A. Schenk and O'Donnell, {Kane Michael} and Jacob Tosado and Butch, {Nicholas P} and Paul Syers and Johnpierre Paglione and Michael Fuhrer",
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Edmonds, M, Hellerstedt, J, Tadich, A, Schenk, A, O'Donnell, KM, Tosado, J, Butch, NP, Syers, P, Paglione, J & Fuhrer, M 2014, Air-stable doping of Bi2Se3 by MoO3 into the topological regime. in L Faraone & M Martyniuk (eds), COMMAD 2014 Conference Proceedings: Conference on Optoelectronic and Microelectronic Materials and Devices., 7038651, IEEE, Institute of Electrical and Electronics Engineers, Piscataway NJ USA, pp. 56-59, Conference on Optoelectronic and Microelectronic Materials and Devices 2014, Perth WA, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038651

Air-stable doping of Bi2Se3 by MoO3 into the topological regime. / Edmonds, Mark; Hellerstedt, John; Tadich, Anton; Schenk, A.; O'Donnell, Kane Michael; Tosado, Jacob; Butch, Nicholas P; Syers, Paul; Paglione, Johnpierre; Fuhrer, Michael.

COMMAD 2014 Conference Proceedings: Conference on Optoelectronic and Microelectronic Materials and Devices. ed. / Lorenzo Faraone; Mariusz Martyniuk. Piscataway NJ USA : IEEE, Institute of Electrical and Electronics Engineers, 2014. p. 56-59 7038651.

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

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N2 - We study vacuum deposition of molecular MoO3 as an acceptor surface transfer dopant for topological insulator Bi2Se3. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi2Se3 single crystals and in-situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. MoO3 is an efficient acceptor, lowering the surface Fermi energy to within -100 meV of the Dirac point, in the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer.

AB - We study vacuum deposition of molecular MoO3 as an acceptor surface transfer dopant for topological insulator Bi2Se3. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi2Se3 single crystals and in-situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. MoO3 is an efficient acceptor, lowering the surface Fermi energy to within -100 meV of the Dirac point, in the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer.

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Edmonds M, Hellerstedt J, Tadich A, Schenk A, O'Donnell KM, Tosado J et al. Air-stable doping of Bi2Se3 by MoO3 into the topological regime. In Faraone L, Martyniuk M, editors, COMMAD 2014 Conference Proceedings: Conference on Optoelectronic and Microelectronic Materials and Devices. Piscataway NJ USA: IEEE, Institute of Electrical and Electronics Engineers. 2014. p. 56-59. 7038651 https://doi.org/10.1109/COMMAD.2014.7038651