Accurate nanoscale crystallography in real-space using scanning transmission electron microscopy

J Houston Dycus, Joshua S Harris, Xiahan Sang, Chris M Fancher, Scott D Findlay, Adedapo A Oni, Tsung-ta E Chan, Carl C Koch, Jacob L Jones, Leslie J Allen, Douglas L Irving, James M LeBeau

Research output: Contribution to journalArticleResearchpeer-review

17 Citations (Scopus)

Abstract

Here, we report reproducible and accurate measurement of crystallographic parameters using scanning transmission electron microscopy. This is made possible by removing drift and residual scan distortion. We demonstrate real-space lattice parameter measurements with <0.1% error for complex-layered chalcogenides Bi2Te3, Bi2Se3, and a Bi2Te2.7Se0.3 nanostructured alloy. Pairing the technique with atomic resolution spectroscopy, we connect local structure with chemistry and bonding. Combining these results with density functional theory, we show that the incorporation of Se into Bi2Te3 causes charge redistribution that anomalously increases the van der Waals gap between building blocks of the layered structure. The results show that atomic resolution imaging with electrons can accurately and robustly quantify crystallography at the nanoscale.
Original languageEnglish
Pages (from-to)946-952
Number of pages7
JournalMicroscopy and Microanalysis
Volume21
Issue number4
DOIs
Publication statusPublished - 2015

Keywords

  • atomic resolution spectroscopy
  • Bi2Te3
  • nanoscale metrology
  • scanning transmission electron microscopy

Cite this

Dycus, J Houston ; Harris, Joshua S ; Sang, Xiahan ; Fancher, Chris M ; Findlay, Scott D ; Oni, Adedapo A ; Chan, Tsung-ta E ; Koch, Carl C ; Jones, Jacob L ; Allen, Leslie J ; Irving, Douglas L ; LeBeau, James M. / Accurate nanoscale crystallography in real-space using scanning transmission electron microscopy. In: Microscopy and Microanalysis. 2015 ; Vol. 21, No. 4. pp. 946-952.
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abstract = "Here, we report reproducible and accurate measurement of crystallographic parameters using scanning transmission electron microscopy. This is made possible by removing drift and residual scan distortion. We demonstrate real-space lattice parameter measurements with <0.1{\%} error for complex-layered chalcogenides Bi2Te3, Bi2Se3, and a Bi2Te2.7Se0.3 nanostructured alloy. Pairing the technique with atomic resolution spectroscopy, we connect local structure with chemistry and bonding. Combining these results with density functional theory, we show that the incorporation of Se into Bi2Te3 causes charge redistribution that anomalously increases the van der Waals gap between building blocks of the layered structure. The results show that atomic resolution imaging with electrons can accurately and robustly quantify crystallography at the nanoscale.",
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author = "Dycus, {J Houston} and Harris, {Joshua S} and Xiahan Sang and Fancher, {Chris M} and Findlay, {Scott D} and Oni, {Adedapo A} and Chan, {Tsung-ta E} and Koch, {Carl C} and Jones, {Jacob L} and Allen, {Leslie J} and Irving, {Douglas L} and LeBeau, {James M}",
year = "2015",
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language = "English",
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Dycus, JH, Harris, JS, Sang, X, Fancher, CM, Findlay, SD, Oni, AA, Chan, TE, Koch, CC, Jones, JL, Allen, LJ, Irving, DL & LeBeau, JM 2015, 'Accurate nanoscale crystallography in real-space using scanning transmission electron microscopy', Microscopy and Microanalysis, vol. 21, no. 4, pp. 946-952. https://doi.org/10.1017/S1431927615013732

Accurate nanoscale crystallography in real-space using scanning transmission electron microscopy. / Dycus, J Houston; Harris, Joshua S; Sang, Xiahan; Fancher, Chris M; Findlay, Scott D; Oni, Adedapo A; Chan, Tsung-ta E; Koch, Carl C; Jones, Jacob L; Allen, Leslie J; Irving, Douglas L; LeBeau, James M.

In: Microscopy and Microanalysis, Vol. 21, No. 4, 2015, p. 946-952.

Research output: Contribution to journalArticleResearchpeer-review

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AU - Harris, Joshua S

AU - Sang, Xiahan

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AU - Findlay, Scott D

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AU - Chan, Tsung-ta E

AU - Koch, Carl C

AU - Jones, Jacob L

AU - Allen, Leslie J

AU - Irving, Douglas L

AU - LeBeau, James M

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